Abstract:Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal of SiO2 or a different protective coat prior to MBE. Chemical pre-cleaning usually results in formation of the thin SiO2 film or the surface passivated by H. Depending on chemical pretreatment different purification processes are applied to prepare the clean surface in UHV. A structure of the Si(001) surface which may affect MBE was studied by STM and RHEED. Experiments were carried out in UHV using the Riber SSC2 instrument coupled with GPI-300 STM. Si wafers were either etched beforehand in the solutions of RCA or HF and HNO3 mixture or passivated in the HF solutions. The (2x1) reconstruction was found to mainly arise in UHV after deoxidization processes such as high-temperature annealing or SiO2 removal by a weak flux of Si. The c(8x8) structure was also often observed by STM at room temperature and found to occupy whole surface or a part of it depending on sample cooling rate and chemical pretreatment. The c(8x8) structure observed by STM was evidenced to correspond to (4x4) one in the RHEED patterns; the later replaced (2x1) when the samples were cooled below 600C and turned out to be reversible with the transition point of ~600C. A structural model of the c(8x8) surface and a pathway of its formation in assumption of surface stress field self ordering are proposed.

STM Study of Si(337) Surface

Study of Metastable Reconstructions of Si(111) Surface by STM

Surface And Interface Study Of U/Si (111)

Stm Study Of Au Adsorption On Si(111)-7x7 Surface: Voltage And Temperature Dependence

Scanning Tunneling Microscopy Of The Si(111)-7x7 Surface And Adsorbed Ge Nanostructures

STM and STS studies of terraces on Si(5 5 12) surface with Ag atom adsorption

High-Resolution Scanning Tunneling Microscopy Imaging Of Si(111)-7 X 7 Structure And Intrinsic Molecular States

Atomic-scale Modification on Si(111)7×7 Surfaces

STM and RHEED study of the Si(001)-c(8x8) surface

Theoretical Model and Experimental Analysis of STM Images on the Surface of the Monocrystalline Si

Scanning Tunneling Microscopy Study of Surface Reconstruction Induced by N Adsorption on Cu（100） Surface

High-resolution Scanning Tunneling Microscopy Imaging of Si(1 1 1)-7 × 7 Structure and Intrinsic Molecular States

Study of Si and Ge growth on Si(100) surface

Atomic Structure Of The Si(112) 7x1-In Surface

STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection

Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)

STM Investigation of the Atomic Structures and Dynamic Processes of Germanium and Silicon Surfaces

Atomistic Aspects of Silicide Reactions Studied with STM

An atomic structural model of (23×23)-R30° reconstruction proposed for 3C–SiC(111) crystallized islands on Si(111) by C60 precursor

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED