M. Krawiec,T. Kwapinski,M. Jalochowski
Abstract:We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique. The STM data show the space and voltage dependent oscillations of the distance between STM tip and the surface which can be explained within one band tight binding Hubbard model. We calculate the STM current using nonequilibrium Keldysh Green function formalism.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the electronic and topological properties of single - atom gold chains (Au nanowires) formed on the Si(335) surface, especially how these properties change with the variation of the bias voltage between the scanning tunneling microscope (STM) tip and the surface. Specifically, the author hopes to reveal the dependence of STM images on the bias voltage polarity through experimental and theoretical calculations, and explain the physical mechanism behind this phenomenon.
### Research Background
In recent years, high - index (vicinal) surfaces have received extensive attention because they can form one - dimensional structures. Depositing a small amount of metal on these surfaces usually results in the formation of chain - like structures, such as Au/Si(335), Au/Si(557), etc. These one - dimensional metal wires are of great scientific significance because they may exhibit Luttinger liquid behavior and also have potential applications in technology, such as nanoelectronics and quantum computing.
### Experimental Methods
The author used scanning tunneling microscopy (STM) combined with reflection high - energy electron diffraction (RHEED) techniques to study the electronic and topological properties of the Au/Si(335) surface. In the experiment, they prepared samples in an ultra - high - vacuum (UHV) environment and controlled the quality of surface reconstruction through RHEED. By changing the bias voltage of STM, they observed significant changes in STM images.
### Theoretical Model
To understand the experimental results, the author proposed a theoretical model based on the tight - binding Hubbard model and calculated the tunneling current using the non - equilibrium Keldysh Green's function formalism. The Hamiltonian of the model system is:
\[
H=\sum_{\lambda \in \{t, s\}, k, \sigma} \epsilon_{\lambda k} c^{\dagger}_{\lambda k \sigma} c_{\lambda k \sigma}+\sum_{\sigma} \epsilon_d c^{\dagger}_{d \sigma} c_{d \sigma}+\sum_{i, \sigma} \epsilon_i c^{\dagger}_{i \sigma} c_{i \sigma}
+\sum_{k, \sigma}(t_t c^{\dagger}_{t k \sigma} c_{d \sigma}+\text{H.c.})
+\sum_{i, k, \sigma}(t_i c^{\dagger}_{s k \sigma} c_{i \sigma}+\text{H.c.})
+\sum_{\sigma}(t_i c^{\dagger}_{d \sigma} c_{i \sigma}+\text{H.c.})
\]
where $c^{\dagger}_{\lambda}$ and $c_{\lambda}$ represent the electron creation and annihilation operators on the STM probe ($\lambda = t$), tip atom ($\lambda = d$), metal wire ($\lambda = i$) and surface ($\lambda = s$), respectively. The expression for the tunneling current is:
\[
I = \frac{2e}{h}\int d\omega T(\omega)\left(f(\omega-\mu_t)-f(\omega-\mu_s)\right)
\]
where the transmittance is:
\[
T(\omega)=\Gamma_t(\omega)\Gamma_s(\omega)\sum_{i = 1}^{N}|G_{id}(\omega)|^2
\]
$\Gamma_t(s)(\omega)$ is the coupling parameter, $f(\omega)$ is the Fermi - Dirac distribution function, and $G_{id}(\omega)$ is the Green's function matrix element connecting the tip and the metal wire atom.
### Results and Discussion
By self - consistently solving the above equations, the author obtained STM images at different bias voltages and found that these images are significantly different with the change of bias voltage. For example, at negative bias.