Implementation of the Su-Schrieffer-Heeger Model in the Self-Assembly Si-In Atomic Chains on the Si(553)-Au Surface

Mieczysław Jałochowski,Mariusz Krawiec,Tomasz Kwapiński
DOI: https://doi.org/10.1021/acsnano.4c00225
IF: 17.1
2024-05-08
ACS Nano
Abstract:Indium-decorated Si atomic chains on a stepped Si(553)-Au substrate are proposed as an extended Su-Schrieffer-Heeger (SSH) model, revealing topological end states. An appropriate amount of In atoms on the Si(553)-Au surface induce the self-assembly formation of trimer SSH chains, where the chain unit cell comprises one In atom and two Si atoms, confirmed by scanning tunneling microscopy images and density functional calculations. The electronic structure of the system, examined through scanning...
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
What problem does this paper attempt to address?
The paper attempts to address the problem of realizing an extended Su-Schrieffer-Heeger (SSH) model on the Si(553)-Au surface through the self-assembly of Si-In atomic chains and revealing its topological end states. Specifically, the researchers aim to induce the formation of trimer SSH chains, consisting of one indium atom (In) and two silicon atoms, by introducing an appropriate amount of indium atoms. The electronic structure of these chains was verified through scanning tunneling microscopy (STM) imaging and density functional theory (DFT) calculations, and additional mid-gap topological states were observed at the ends of the chains. ### Main Research Questions: 1. **Realization of the SSH Model**: Forming extended SSH chains on the Si(553)-Au surface through self-assembly methods and verifying their topological properties. 2. **Observation of Topological End States**: Observing and analyzing the topological end states in these self-assembled atomic chains through experimental and theoretical calculations. 3. **Characterization of Electronic Structure**: Characterizing the electronic structure of these chains, especially the mid-gap topological states, using STM and scanning tunneling spectroscopy (STS) techniques. 4. **Impact of Different Geometrical Configurations**: Investigating the impact of different In atom arrangements on the topological properties of the chains, particularly the topological states appearing at the ends of the chains. ### Research Background: - **SSH Model**: Initially used to describe polyacetylene chains in chemistry, featuring an alternating coupled dimer chain structure that supports two different topological phases. - **Topological Materials**: In low-dimensional systems, topological materials exhibit unique properties, such as mid-gap boundary states appearing at both ends. - **Experimental Progress**: The SSH model has been realized in other systems through atomic manipulation methods, but the self-assembled non-trivial geometrical structure has not yet been achieved on the Si(553)-Au surface. ### Experimental and Theoretical Methods: - **Experimental Methods**: Using STM and STS techniques to observe and measure the morphology and electronic structure of the Si-In chains. - **Theoretical Calculations**: Employing DFT and tight-binding (TB) models to analyze the electronic band structure, density of states, and eigenfunctions of the chains, verifying their topological properties. ### Main Findings: - **Self-Assembly of SSH Chains**: Successfully formed trimer SSH chains consisting of one In atom and two Si atoms on the Si(553)-Au surface. - **Observation of Topological End States**: Mid-gap topological states were observed at the ends of the chains through STS measurements, which were absent in the middle parts of the chains. - **Impact of Different Geometrical Configurations**: TB calculations revealed that different In atom arrangements significantly affect the topological properties of the chains, with certain configurations enhancing the topological states. ### Conclusion: The study successfully realized the self-assembly of extended SSH chains on the Si(553)-Au surface and observed topological end states through a combination of experimental and theoretical methods. These findings provide an important experimental and theoretical foundation for further research on the properties and potential applications of topological materials.