Detecting Surface Resonance States Of Si(111)-Root 3x Root 3-Ag With A Scanning Tunneling Microscope

Lan Chen,H. Xiang,Bin Li,Aidi Zhao,Xudong Xiao,Jinlong Yang,J. Hou,Qingshi Zhu
DOI: https://doi.org/10.1103/PhysRevB.70.245431
IF: 3.7
2004-01-01
Physical Review B
Abstract:We have used the scanning tunneling microscopy and first-principles theoretical simulations to spatially image the energy-resolved local density of electronic states on the Si(111)root3xroot3-Ag surface. The dI/dV maps for different electronic states on this surface, including two new surface resonance states that had not been observed before, reveal the distribution of these states in real space. The results show that the scanning tunneling microscopy combined with the theoretical simulation can discover and distinguish various surface states, especially surface resonance states. Our studies also suggest that the correct information about surface states must be acquired via adopting a slab model with sufficient Si double layers.
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