Abstract:Silicon represents a common intrinsic impurity in graphene, bonding to either three or four carbon neighbors, respectively, in a single or double carbon vacancy. We investigate the effect of the latter defect (Si-C4) on the structural and electronic properties of graphene using density functional theory. Calculations based both on molecular models and with periodic boundary conditions have been performed. The two-carbon vacancy was constructed from pyrene (pyrene-2C) which was then expanded to circumpyrene-2C. The structural characterization of these cases revealed that the ground state is slightly non-planar, with the bonding carbons displaced from the plane by up to ±0.2 Å. This non-planar structure was confirmed by embedding the defect into a 10 × 8 supercell of graphene, resulting in 0.22 eV lower energy than the previously considered planar structure. Natural bond orbital analysis showed sp3 hybridization at the silicon atom for the non-planar structure and sp2d hybridization for the planar structure. Atomically resolved electron energy loss spectroscopy and corresponding spectrum simulations provide a mixed picture: a flat structure provides a slightly better overall spectrum match, but a small observed pre-peak is only present in the corrugated simulation. Considering the small energy barrier between the two equivalent corrugated conformations, both structures could plausibly exist as a superposition over the experimental time scale of seconds.

Observation of Local Electronic Structures of Adatom Vacancies Insi(111)−(7×7)surface in Real Space

Observation Of Local Electronic Structures Of Adatom Vacancies In Si(111)-(7x7) Surface In Real Space

Adatom Vacancies on the Si(111)-(7×7) Surface

Electronic Structures of an Extra Si Atom Diffusing in the Si(1 1 1)(7 × 7) Surface

Atomic Structure Of The Si(112) 7x1-In Surface

Dimer-vacancy–dimer-vacancy Interaction on the Si(001) Surface: the Nature of the 2×Nstructure

Detecting Surface Resonance States Of Si(111)-Root 3x Root 3-Ag With A Scanning Tunneling Microscope

Visualizing Buried Silicon Atoms at the Cd-Si(111)- 7×7 Interface with Localized Electrons

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

First principles study of vacancies in Si

Observation of surface superstructure induced by systematic vacancies in the topological Dirac semimetal Cd$_{3}$As$_{2}$

Atomic Structure Of The Si(103)1x1-In Surface

SCANNING TUNNELING MICROSCOPY INVESTIGATION OF THE Si(103)- (1 × 1)–in SURFACE

Missing dimer vacancies ordering on the Si(100) surface

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Electronic-Structure And Its Dependence On Local Order For H/Si(111)-(1x1) Surfaces

Interaction Between Adatom-Induced Localized States and A Quasi-Two-Dimensional Electron Gas

Structure and electronic states of a graphene double vacancy with an embedded Si dopant

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Surface Vacancy Generation by STM Tunneling Electrons in the Presence of Indigo Molecules on Cu(111)

Electronic-Structures Of Ag-Adsorbed Si(111) Surface