Abstract:Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short range (7x7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(111)-(7x7) surface shows that only the 1/7th order spots are present on the air-oxidized surface. The oxide layer is ~ 2-3 nm thick, as revealed by cross-sectional transmission electron microscopy (XTEM). Growth of Ag islands on these air-oxidized Si(111)-(7x7) surfaces has been investigated by in-situ RHEED and STM and ex-situ XTEM and scanning electron microscopy. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher substrate temperatures. For deposition at 550{\deg}C face centered cubic Ag nanoislands grow with a predominant epitaxial orientation [1 -1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si along with its twin [-1 1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si, as observed for epitaxial growth of Ag on Si(111) surfaces. The twins are thus rotated by a 180{\deg} rotation of the Ag unit cell about the Si [111] axis. It is intriguing that Ag nanoislands follow an epitaxial relationship with the Si(111) substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently the short range order on the oxide surface influences the crystallographic orientation of the Ag nanoislands.

Creating and modulating electronic states on noble metal surfaces: ultrathin Ag islands on Si(111)-7$\times$7 as a prototype

Creating and Modulating Electronic States on Noble Metal Surfaces: Ultrathin Ag Islands on Si(111)-7×7 As a Prototype

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(111)-(7x7) surfaces: Influence of short range order on the substrate

Epitaxial growth of silver nanoislands on the surface of silicon nanowires in ambient air

Detecting Surface Resonance States Of Si(111)-Root 3x Root 3-Ag With A Scanning Tunneling Microscope

Electronic-Structures Of Ag-Adsorbed Si(111) Surface

Interface-Induced Complex Electronic Interference Structures in Ag Films on Ge(111)

Electronic Structure Of Silicene On Ag(111): Strong Hybridization Effects

Noble and alkali adatoms on a \mathrm {Si(111) \sqrt {3} \times \sqrt {3}} –Ag surface: a first-principles study

Crossover Between Silicene and Ultra-Thin Si Atomic Layers on Ag(111) Surfaces

Identifying the Numbers of Ag Atoms in Their Nanostructures Grown on a Si(111)-(7 × 7) Surface

Surface Vs. Bulk Electronic Structure of Silver Determined by Photoemission

Si(111)-$\sqrt{21}\times\sqrt{21}$-(Ag+Cs) Surface Studied by Scanning Tunneling Microscopy and Angle-Resolved Photoemission Spectroscopy

Novel Growth of Ag Islands on Si(111): Plateaus with a Singular Height

Interaction Between Adatom-Induced Localized States and A Quasi-Two-Dimensional Electron Gas

Growth of Ag on Pb Island with Si(111) Substrate

Mining Single-Electron Spectra of the Interface States from a Supercell Band Structure of Silicene on an Ag ( 111 ) Substrate with Band-Unfolding Methodology

Noble And Alkali Adatoms On A Si(111)Root 3 X Root 3-Ag Surface: A First-Principles Study

Formation, Structures and Electronic Properties of Silicene Oxides on Ag(111)