Abstract:Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short range (7x7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(111)-(7x7) surface shows that only the 1/7th order spots are present on the air-oxidized surface. The oxide layer is ~ 2-3 nm thick, as revealed by cross-sectional transmission electron microscopy (XTEM). Growth of Ag islands on these air-oxidized Si(111)-(7x7) surfaces has been investigated by in-situ RHEED and STM and ex-situ XTEM and scanning electron microscopy. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher substrate temperatures. For deposition at 550{\deg}C face centered cubic Ag nanoislands grow with a predominant epitaxial orientation [1 -1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si along with its twin [-1 1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si, as observed for epitaxial growth of Ag on Si(111) surfaces. The twins are thus rotated by a 180{\deg} rotation of the Ag unit cell about the Si [111] axis. It is intriguing that Ag nanoislands follow an epitaxial relationship with the Si(111) substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently the short range order on the oxide surface influences the crystallographic orientation of the Ag nanoislands.

Height preference and strain in Ag islands on Si(111)-(7x7)

Novel Growth of Ag Islands on Si(111): Plateaus with a Singular Height

Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(111)-(7x7) surfaces: Influence of short range order on the substrate

Atomic Scale Study Of Strain Relaxation In Sn Islands On Sn-Induced Si(111)-(2 Root 3x2 Root 3) Surface

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(23×23) surface

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Bistability of Nanoscaleag Islands on a Si(111)-(4 X 1)-in Surface Induced by Anisotropic Stress.

Creating and modulating electronic states on noble metal surfaces: ultrathin Ag islands on Si(111)-7$\times$7 as a prototype

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates

Formation and Coarsening of Ag(110) Bilayer Islands on Nial(110): Stm Analysis and Atomistic Lattice-Gas Modeling

Growth of Ag on Pb Island with Si(111) Substrate

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Effect of Interlayer Strain Interaction on the Island Composition and Ordering in Ge/Si(001) Island Superlattices

Anomalous intralayer growth of epitaxial Si on Ag(111)

Preferred Structures Of The Atomic Ag Islands On Silicone Oil Surfaces

Substrate Dependence Of Anisotropic Electronic Structure In Ag(111) Quantum Film Studied By Angle-Resolved Photoelectron Spectroscopy

Creating and Modulating Electronic States on Noble Metal Surfaces: Ultrathin Ag Islands on Si(111)-7×7 As a Prototype

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Interface-Induced Complex Electronic Interference Structures in Ag Films on Ge(111)