Abstract:Surface morphologies and electronic structures of Sn thin films prepared on Si(111)-$\text{Sn}(2\sqrt{3}\ifmmode\times\else\texttimes\fi{}2\sqrt{3})$ $R30\ifmmode^\circ\else\textdegree\fi{}$ substrate are investigated by low temperature scanning tunneling microscopy/scanning tunneling spectroscopy (STS). A typical Stranski--Krastanov growth is observed at various growth temperatures (95--300 K), and the Sn islands above wetting layers exhibit the preferential thicknesses of odd-numbered atomic layers. STS measurement shows the formation of well-defined quantum well states with an oscillation period of 2 ML, which modulates the surface energy and accounts for the observed preferential thicknesses. Due to the interplay between large lattice mismatch and symmetry difference, a transition from $\ensuremath{\alpha}\text{-Sn}$ to $\ensuremath{\beta}\text{-Sn}$ occurs at 4 ML, which confirms the previous report. From 4 to 11 ML, the mismatch resulted strain manifests the growth via thickness-dependent striplike modulation structures on the surfaces of all Sn islands. Upon room temperature annealing, the as-deposited Sn islands undergo a metal-insulator transition, while the band gaps of wetting layers increase and oppositely shift with respect to the Fermi level for $n$- and $p$-type substrates. The change in electronic property is attributed to the electron transfer at the Sn-Si interface, which also affects the growth and morphologies of films.

Atomic Scale Study Of Strain Relaxation In Sn Islands On Sn-Induced Si(111)-(2 Root 3x2 Root 3) Surface

Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(23×23) surface

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(2 Root 3x2 Root 3) R30 Degrees Surface

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(23×23)R…

First-principles study of the topological surface states of -Sn(111)

Controllable Modulation to Quantum Well States on Β-Sn Islands

Self-assembled Sn nanoplatelets on Si(1 1 1)-2√ 3 × 2√ 3 -Sn surfaces

Self-assembled Sn Nanoplatelets on Si(1 1 1)- 2\sqrt 3 \times 2\sqrt 3 -Sn Surfaces

Self-assembled Sn nanoplatelets on Si(111)-2 32 3-Sn surfaces

Height preference and strain in Ag islands on Si(111)-(7x7)

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Metastable Face-Centered Cubic Structure and Structural Transition of Sn on 2H-Nbse 2 (0001)

Self-assembled Sn nanoplatelets on Si(1 11)-2V3 x 2√3-Sn surfaces

Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator

Relationships Between Strain and Band Structure in Si(001) and Si(110) Nanomembranes

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Engineering the Near-Edge Electronic Structure of Snse Through Strains

Bistability of Nanoscaleag Islands on a Si(111)-(4 X 1)-in Surface Induced by Anisotropic Stress.

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si ( 111 )-( 2 3 Ã 2 3 ) R 30 ° surface

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Strain-Mediated Patterning of Surface Nanostructure by the Subsurface Island Array