Abstract:Surface morphologies and electronic structures of Sn thin films prepared on Si(111)-$\text{Sn}(2\sqrt{3}\ifmmode\times\else\texttimes\fi{}2\sqrt{3})$ $R30\ifmmode^\circ\else\textdegree\fi{}$ substrate are investigated by low temperature scanning tunneling microscopy/scanning tunneling spectroscopy (STS). A typical Stranski--Krastanov growth is observed at various growth temperatures (95--300 K), and the Sn islands above wetting layers exhibit the preferential thicknesses of odd-numbered atomic layers. STS measurement shows the formation of well-defined quantum well states with an oscillation period of 2 ML, which modulates the surface energy and accounts for the observed preferential thicknesses. Due to the interplay between large lattice mismatch and symmetry difference, a transition from $\ensuremath{\alpha}\text{-Sn}$ to $\ensuremath{\beta}\text{-Sn}$ occurs at 4 ML, which confirms the previous report. From 4 to 11 ML, the mismatch resulted strain manifests the growth via thickness-dependent striplike modulation structures on the surfaces of all Sn islands. Upon room temperature annealing, the as-deposited Sn islands undergo a metal-insulator transition, while the band gaps of wetting layers increase and oppositely shift with respect to the Fermi level for $n$- and $p$-type substrates. The change in electronic property is attributed to the electron transfer at the Sn-Si interface, which also affects the growth and morphologies of films.

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(23×23)R…

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(2 Root 3x2 Root 3) R30 Degrees Surface

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si ( 111 )-( 2 3 Ã 2 3 ) R 30 ° surface

Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(23×23) surface

Atomic Scale Study Of Strain Relaxation In Sn Islands On Sn-Induced Si(111)-(2 Root 3x2 Root 3) Surface

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