Abstract:Topology and superconductivity, two distinct phenomena offer unique insight into quantum properties and their applications in quantum technologies, spintronics, and sustainable energy technologies if system can be found where they coexist. Tin (Sn) plays a pivotal role here as an element due to its two structural phases, $\alpha$-Sn and $\beta$-Sn, exhibiting topological characteristics ($\alpha$-Sn) and superconductivity ($\beta$-Sn). In this study we show how precise control of $\alpha$ and $\beta$ phases of Sn thin films can be achieved by using molecular beam epitaxy grown buffer layers with systematic control over the lattice parameter. The resulting Sn films showed either $\beta$-Sn or $\alpha$-Sn phases as the lattice constant of the buffer layer was varied from 6.10 A to 6.48 A, covering the range between GaSb (closely matched to InAs) and InSb. The crystal structures of the $\alpha$- and $\beta$-Sn films were characterized by x-ray diffraction and confirmed by Raman spectroscopy and scanning transmission electron microscopy. The smooth and continuous surface morphology of the Sn films was validated using atomic force microscopy. The characteristics of $\alpha$- and $\beta$-Sn phases were further verified using electrical transport measurements by observing resistance drop near 3.7 K for superconductivity of the $\beta$-Sn phase and Shubnikov-de Haas oscillations for the $\alpha$-Sn phase. Density functional theory calculations showed that the stability of the Sn phases is highly dependent on lattice strain, with $\alpha$-Sn being more stable under tensile strain and $\beta$-Sn becoming favorable under compressive strain, which is in good agreement with experimental observations. Hence, this study sheds light on controlling Sn phases through lattice engineering, enabling innovative applications in quantum technologies and beyond.

Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy

Wafer-Scale and Topologically Nontrivial Α - Sn Films Grown on InSb(001) by Molecular-Beam Epitaxy

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(23×23)R…

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$-Sn

First-principles study of the topological surface states of -Sn(111)

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(2 Root 3x2 Root 3) R30 Degrees Surface

Thermal Stability Enhancement in Epitaxial α-Sn Films by Strain Engineering

Thermal Stability Enhancement in Epitaxial {\alpha}-Sn Films by Strain Engineering

3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

3D topological semimetal phases of strained α -Sn on insulating substrate

Controlling structural phases of Sn through lattice engineering

Multiple Carrier Transport in High-Quality Α-Sn Films Grown on CdTe (001) by Molecular Beam Epitaxy

Elemental topological Dirac semimetal α-Sn with high quantum mobility

Topological Dirac semimetal phases in InSb/$\alpha$-Sn semiconductor superlattices

Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

Epitaxial Atomic Layer Deposition of Sn-Doped Indium Oxide

Phase‐Pure α‐Sn Quantum Material on Si Seeded by a 2 nm‐Thick Ge Layer

Thermal Stability Enhancement in Epitaxial Alpha Tin Films by Strain Engineering

Transport evidence of the three-dimensional Dirac semimetal phase in doped $α$-Sn grown by molecular beam epitaxy