Abstract:{\alpha}-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-quality {\alpha}-Sn remains a challenge, which limits our understanding of its quantum transport properties and device applications. Here, we present epitaxial growth of {\alpha}-Sn on InSb (001) with the highest quality thus far and reveal that it is a topological Dirac semimetal (TDS) by quantum transport investigations together with first-principles calculations. We realise unprecedentedly high quantum mobilities of both the surface state (30000 cm^2/Vs), which is ten times higher than the previously reported values, and the bulk heavy-hole (HH) state (1700 cm^2/Vs), which has never been obtained experimentally. These excellent features allow us, for the first time, to quantitatively characterise the nontrivial interfacial and bulk band structure of {\alpha}-Sn via Shubnikov-de Haas oscillations at various temperatures and under various magnetic field directions. These results reveal the existence of a topological surface state (TSS) and a bulk HH band, both with nontrivial phase shifts, indicating that the TDS phase of {\alpha}-Sn is established. Furthermore, we demonstrate a crossover from the TDS to a two-dimensional topological insulator (2D-TI) and a subsequent phase transition to a trivial insulator when varying the thickness of {\alpha}-Sn. Our work indicates that {\alpha}-Sn is an excellent model system to study novel topological phases and a prominent material candidate for topological devices.

Wafer-Scale and Topologically Nontrivial Α - Sn Films Grown on InSb(001) by Molecular-Beam Epitaxy

First-principles study of the topological surface states of -Sn(111)

Thermal Stability Enhancement in Epitaxial α-Sn Films by Strain Engineering

Thermal Stability Enhancement in Epitaxial {\alpha}-Sn Films by Strain Engineering

3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate

Multiple Superconducting Transitions in {\alpha}-Sn Films Grown by Molecular Beam Epitaxy

Elemental topological Dirac semimetal α-Sn with high quantum mobility

Thermal Stability Enhancement in Epitaxial Alpha Tin Films by Strain Engineering

Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

Transport evidence of the spin-polarized topological surface states of α -Sn grown on CdTe by molecular beam epitaxy

3D topological semimetal phases of strained α -Sn on insulating substrate

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$-Sn

Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy

Transport evidence of the three-dimensional Dirac semimetal phase in doped $α$-Sn grown by molecular beam epitaxy

Large magnetoresistance observed in {\alpha}-Sn/InSb heterostructures

Transport evidence of the three-dimensional Dirac semimetal phase in doped $\alpha$-Sn grown by molecular beam epitaxy

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Multiple Superconducting Transitions in Α-Sn/β-sn Mixed Films Grown by Molecular Beam Epitaxy

Multiple Carrier Transport in High-Quality Α-Sn Films Grown on CdTe (001) by Molecular Beam Epitaxy

Topological Dirac semimetal phases in InSb/$\alpha$-Sn semiconductor superlattices

Realization of Epitaxial Thin Films of the Topological Crystalline Insulator Sr$_3$SnO