Abstract:{\alpha}-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-quality {\alpha}-Sn remains a challenge, which limits our understanding of its quantum transport properties and device applications. Here, we present epitaxial growth of {\alpha}-Sn on InSb (001) with the highest quality thus far and reveal that it is a topological Dirac semimetal (TDS) by quantum transport investigations together with first-principles calculations. We realise unprecedentedly high quantum mobilities of both the surface state (30000 cm^2/Vs), which is ten times higher than the previously reported values, and the bulk heavy-hole (HH) state (1700 cm^2/Vs), which has never been obtained experimentally. These excellent features allow us, for the first time, to quantitatively characterise the nontrivial interfacial and bulk band structure of {\alpha}-Sn via Shubnikov-de Haas oscillations at various temperatures and under various magnetic field directions. These results reveal the existence of a topological surface state (TSS) and a bulk HH band, both with nontrivial phase shifts, indicating that the TDS phase of {\alpha}-Sn is established. Furthermore, we demonstrate a crossover from the TDS to a two-dimensional topological insulator (2D-TI) and a subsequent phase transition to a trivial insulator when varying the thickness of {\alpha}-Sn. Our work indicates that {\alpha}-Sn is an excellent model system to study novel topological phases and a prominent material candidate for topological devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the quality of α - Sn (an allotrope of tin) thin films, so as to study its quantum transport properties and topological phases more accurately. Specifically, the authors grew high - quality α - Sn thin films on InSb(001) substrates by molecular beam epitaxy (MBE) technology, and confirmed the topological Dirac semimetal (TDS) characteristics of α - Sn under in - plane compressive strain through quantum transport measurements and first - principles calculations. In addition, the paper also explored the phase - transition process from TDS to two - dimensional topological insulator (2D - TI) and then to trivial insulator by changing the thickness of α - Sn thin films. ### Main problems: 1. **Improving the quality of α - Sn thin films**: - Grow high - quality α - Sn thin films on InSb(001) substrates by molecular beam epitaxy (MBE) technology to overcome the problems caused by insufficient interface roughness and crystal quality in previous studies. - Confirm the topological Dirac semimetal (TDS) characteristics of α - Sn under in - plane compressive strain. 2. **Studying the quantum transport properties of α - Sn**: - Through quantum transport measurements such as Shubnikov - de Haas (SdH) oscillations, the energy band structures of the non - trivial surface states (TSS) and bulk states (HH) of α - Sn are characterized in detail. - Estimate the quantum mobilities of the surface states and the bulk states, and find that the quantum mobility of the surface states is as high as 30,000 cm²/Vs, and the quantum mobility of the bulk states is 1,700 cm²/Vs. 3. **Exploring the topological phase transitions of α - Sn**: - By changing the thickness of α - Sn thin films, observe the phase - transition process from TDS to 2D - TI and then to trivial insulator. - Use first - principles calculations and experimental data to verify the mechanisms of these phase transitions. ### Solutions: - **Growth of high - quality thin films**: Use molecular beam epitaxy (MBE) technology to grow α - Sn thin films on InSb(001) substrates, ensuring that the thin films have high crystalline quality and atomically flat interfaces. - **Quantum transport measurements**: Through quantum transport measurements such as Shubnikov - de Haas (SdH) oscillations, the non - trivial energy band structures of α - Sn are characterized in detail. - **First - principles calculations**: Combine first - principles calculations to verify experimental results and explain the phase - transition mechanisms. ### Experimental results: - **High - quality α - Sn thin films**: Successfully grew α - Sn thin films with high crystalline quality and atomically flat interfaces. - **Quantum transport properties**: Through SdH oscillation measurements, the energy band structures of the non - trivial surface states and bulk states of α - Sn were confirmed, and the quantum mobilities of the surface states and the bulk states were estimated. - **Topological phase transitions**: By changing the thickness of the thin films, the phase - transition process from TDS to 2D - TI and then to trivial insulator was observed, and the mechanisms of these phase transitions were verified by first - principles calculations. In conclusion, this paper, by improving the quality of α - Sn thin films, has studied in detail its quantum transport properties and topological phase transitions, providing an important experimental and theoretical basis for understanding the topological properties of α - Sn and its applications in topological devices.

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