Abstract:{\alpha}-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-quality {\alpha}-Sn remains a challenge, which limits our understanding of its quantum transport properties and device applications. Here, we present epitaxial growth of {\alpha}-Sn on InSb (001) with the highest quality thus far and reveal that it is a topological Dirac semimetal (TDS) by quantum transport investigations together with first-principles calculations. We realise unprecedentedly high quantum mobilities of both the surface state (30000 cm^2/Vs), which is ten times higher than the previously reported values, and the bulk heavy-hole (HH) state (1700 cm^2/Vs), which has never been obtained experimentally. These excellent features allow us, for the first time, to quantitatively characterise the nontrivial interfacial and bulk band structure of {\alpha}-Sn via Shubnikov-de Haas oscillations at various temperatures and under various magnetic field directions. These results reveal the existence of a topological surface state (TSS) and a bulk HH band, both with nontrivial phase shifts, indicating that the TDS phase of {\alpha}-Sn is established. Furthermore, we demonstrate a crossover from the TDS to a two-dimensional topological insulator (2D-TI) and a subsequent phase transition to a trivial insulator when varying the thickness of {\alpha}-Sn. Our work indicates that {\alpha}-Sn is an excellent model system to study novel topological phases and a prominent material candidate for topological devices.

Transport evidence of the spin-polarized topological surface states of α -Sn grown on CdTe by molecular beam epitaxy

Transport evidence of the three-dimensional Dirac semimetal phase in doped $α$-Sn grown by molecular beam epitaxy

Transport evidence of the three-dimensional Dirac semimetal phase in doped $\alpha$-Sn grown by molecular beam epitaxy

First-principles study of the topological surface states of -Sn(111)

Evidences of Topological Surface States in the Nodal-Line Semimetal SnTaS2 Nanoflakes.

Elemental topological Dirac semimetal α-Sn with high quantum mobility

Multiple Carrier Transport in High-Quality Α-Sn Films Grown on CdTe (001) by Molecular Beam Epitaxy

Wafer-Scale and Topologically Nontrivial Α - Sn Films Grown on InSb(001) by Molecular-Beam Epitaxy

Quantum transport properties of the topological Dirac Semimetal $α$-Sn

Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy

Evidence of topological nodal lines and surface states in the centrosymmetric superconductor SnTaS 2

Multiple Superconducting Transitions in {\alpha}-Sn Films Grown by Molecular Beam Epitaxy

Evidence of a Topological Edge State in a Superconducting Nonsymmorphic Nodal-Line Semimetal

Observation of Spin-Polarized Surface States in the Nodal-Line Semimetal SnTaS2

Evidence of Topological Nodal Lines and Surface States in the Centrosymmetric Superconductor SnTaS2

Heavy Surface State In A Possible Topological Kondo Insulator: Magnetothermoelectric Transport On The (011) Plane Of Smb6

Observation of spin-polarized surface states in a nodal line semimetal SnTaS$_{2}$

Dual Evidence of Surface Dirac States in Thin Cylindrical Topological Insulator Bi2Te3 Nanowires

Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility

(111) Surface States of SnTe

Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films