Abstract:In recent years, topological antiferromagnetic materials with hexagonal Kagome structure have attracted great research interest due to their unique properties. Despite having a net magnetic moment close to zero, these topological antiferromagnets exhibit strong magnetoelectric, magneto-optical, and magnetothermal effects, with strength comparable to that of ferromagnetic materials, which makes them highly valuable for various applications. After extensive studies of several years, people have realized that most of the unique properties of topological antiferromagnets are actually closely related to their magnetic structures. However, it has been found that the magnetic structure of these materials is highly sensitive to their chemical composition and growth conditions. Therefore, it is crucial to develop a universal and simple method for measuring the magnetic structure and determining the magnetic phase transitions of hexagonal Kagome topological antiferromagnetic materials, which can severe as a good supplement for the current high-energy neutron diffraction approach, that is not accessible for ordinary laboratories. In this study, we successfully prepared high-quality (11 0)-oriented hexagonal Kagome antiferromagnetic Mn 3 Sn thin films on (1 02)-oriented Al 2 O 3 single crystal substrates using the pulsed laser deposition (PLD) method. After systematically measuring how the magnetic and transport properties of a Mn 3 Sn thin film change with temperature, we found that its magnetization curve, Hall resistivity curve, and magnetoresistance curve exhibit certain anomalous features at some or all of its three magnetic phase transition temperatures. These features can serve as good evidences of magnetic phase transitions in this hexagonal Kagome antiferromagnetic Mn3Sn thin film, or even could be used to measure the temperature of these magnetic phase transitions. Our work contributes to the further advancement of the application of hexagonal Kagome topological antiferromagnetic materials in spin electronic devices.

Multiple Superconducting Transitions in Α-Sn/β-sn Mixed Films Grown by Molecular Beam Epitaxy

Multiple Superconducting Transitions in {\alpha}-Sn Films Grown by Molecular Beam Epitaxy

Superconducting Properties and Topological Nodal Line Signatures in Centrosymmetric Compound SnTaS$_2$

Multiple Carrier Transport in High-Quality Α-Sn Films Grown on CdTe (001) by Molecular Beam Epitaxy

Wafer-Scale and Topologically Nontrivial Α - Sn Films Grown on InSb(001) by Molecular-Beam Epitaxy

Thermal Stability Enhancement in Epitaxial α-Sn Films by Strain Engineering

Allotropic transition of Dirac semimetal α-Sn to superconductor β-Sn induced by focused-ion-beam irradiation

Thermal Stability Enhancement in Epitaxial {\alpha}-Sn Films by Strain Engineering

Allotropic transition of Dirac semimetal α-Sn to superconductor β-Sn induced by irradiation of focused ion beam

Transport evidence of the three-dimensional Dirac semimetal phase in doped $α$-Sn grown by molecular beam epitaxy

Multi-band Superconductivity in a Misfit Layered Compound (Snse)1.16(nbse2)2

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Enhanced Superconductivity Induced by the Hexagonal-Array-Cooling-Shrinkage Effect

Thermal Stability Enhancement in Epitaxial Alpha Tin Films by Strain Engineering

Transport evidence of the three-dimensional Dirac semimetal phase in doped $\alpha$-Sn grown by molecular beam epitaxy

Transport evidence of the spin-polarized topological surface states of α -Sn grown on CdTe by molecular beam epitaxy

Determination of the magnetic phase transition in Mn 3 Sn thin films via transport measurements

Epitaxial Growth of Single Unit-Cell Superconducting Β-Bi2pd

Controlling structural phases of Sn through lattice engineering

Flux growth, mixed valence state and superconductivity of Sn4Sb3 intermetallic crystals

Large magnetoresistance observed in {\alpha}-Sn/InSb heterostructures