Abstract:The surface and bulk states in topological materials have shown promise in many applications. Grey or $\alpha$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investigate the bulk and surface electronic structure of $\alpha$-Sn thin films on InSb(001) grown by molecular beam epitaxy. We find that there is no significant warping in the shapes of the bulk bands. We also observe the presence of only two surface states near the valence band maximum in both thin (13 bilayer) and thick (400 bilayer) films. In 50 bilayer films, these two surface states coexist with quantum well states. Surprisingly, both of these surface states are spin-polarized with orthogonal spin-momentum locking and opposite helicities. One of these states is the spin-polarized topological surface state and the other a spin resonance. Finally, the presence of another orthogonal spin-momentum locked topological surface state from a secondary band inversion is verified. Our work clarifies the electronic structure of $\alpha$-Sn(001) such that better control of the electronic properties can be achieved. In addition, the presence of two spin-polarized surface states near the valence band maximum has important ramifications for the use of $\alpha$-Sn in spintronics.

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(2 Root 3x2 Root 3) R30 Degrees Surface

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(23×23)R…

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si ( 111 )-( 2 3 Ã 2 3 ) R 30 ° surface

Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(23×23) surface

Atomic Scale Study Of Strain Relaxation In Sn Islands On Sn-Induced Si(111)-(2 Root 3x2 Root 3) Surface

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

First-principles study of the topological surface states of -Sn(111)

Self-assembled Sn nanoplatelets on Si(111)-2 32 3-Sn surfaces

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates

Self-Assembled Sn Nanoplatelets on Si(111)-2 Root 3 X 2 Root 3-Sn Surfaces

Sn-mediated transformations on Si(111) surface: reconstructions, electromigration, homoepitaxy

Self-assembled Sn nanoplatelets on Si(1 11)-2V3 x 2√3-Sn surfaces

Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

Self-assembled Sn Nanoplatelets on Si(1 1 1)- 2\sqrt 3 \times 2\sqrt 3 -Sn Surfaces

Wafer-Scale and Topologically Nontrivial Α - Sn Films Grown on InSb(001) by Molecular-Beam Epitaxy

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

Surface Morphologies of Pb Thin Films on Si(111)

Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy

Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator