Bistability Of Nanoscale Ag Islands On A Si(111)-(4 X 1)-In Surface Induced By Anisotropic Stress

Kewei Xu
DOI: https://doi.org/10.1103/PhysRevLett.103.076102
IF: 8.6
2009-01-01
Physical Review Letters
Abstract:We demonstrate experimentally the existence of two stability regimes of Ag nanoislands grown on a Si(111)-(4 x 1)-In surface: a conventional regime at low temperature where only one island shape is stable, and an unconventional regime at room temperature (RT) where isotropic compact islands coexist with anisotropic elongated ones. First-principles calculations show the unusual bistability at RT arises from the fact that the Ag nanoislands are under anisotropic stress, supporting a recent theoretical prediction by Zandvliet and van Gastel [Phys. Rev. Lett. 99, 136103 (2007)].
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