Abstract:The epitaxial growth of silicene has been the subject of many investigations, controversies and non-classical results. In particular, the initially promising deposition of Si on a metallic substrate such as Ag(111) has revealed unexpected growth modes where Si is inserted at the beginning of the growth in the first atomic plane of the substrate. In order to rationalize this anomalous growth mode, we develop an out-of-equilibrium description of a lattice-based epitaxial growth model, which growth dynamics are analyzed via kinetic Monte-Carlo simulations. This model incorporates several effects revealed by the experiments such as the intermixing between Si and Ag, and surface effects. It is parametrized thanks to an approach in which we show that relatively precise estimates of energy barriers can be deduced by meticulous analysis of atomic microscopy images. This analysis enables us to reproduce both qualitatively and quantitatively the anomalous growth patterns of Si on Ag(111). We show that the dynamics results in two modes, a classical sub-monolayer growth mode at low temperature, and an inserted growth mode at higher temperatures, where the deposited Si atoms insert in the first layer of the substrate by replacing Ag atoms. Furthermore, we reproduce the non-standard shape of the experimental plot of the island density as a function of temperature, with a shift in island density variation during the transition between the submonoloyer and inserted growth modes.

What problem does this paper attempt to address?

The paper aims to address the issue of abnormal growth patterns observed when silicon grows on a silver (Ag(111)) substrate. Specifically: 1. **Research Background**: Silicene, as a two-dimensional material, has attracted widespread research interest. However, during the deposition process on metal substrates such as silver (Ag(111)), silicon atoms at high temperatures tend to insert into the first layer of the substrate, replacing silver atoms. This phenomenon is known as "inserted growth." This growth pattern is different from the traditional two-dimensional thin film growth mode. 2. **Main Issue**: Experimental observations show that at low temperatures (around 200 K), silicon atoms form two-dimensional island structures on the substrate surface; whereas at higher temperatures (greater than 300 K), silicon atoms insert into the first layer of the substrate, displacing silver atoms. This inserted growth mode leads to an atypical behavior of island structure density with temperature changes, i.e., a sharp increase in island structure density between 200 and 300 K, followed by a gradual decrease at higher temperatures. 3. **Research Objective**: To understand this abnormal growth pattern, researchers developed a lattice-based kinetic model and analyzed the growth dynamics through kinetic Monte-Carlo simulations. The model considers various phenomena revealed by experiments, including the intermixing effect between silicon and silver and surface effects. Through parameterization, they were able to estimate energy barriers from atomic microscope images and successfully reproduced the experimentally observed abnormal growth patterns and their statistical characteristics. In summary, the paper aims to explain the abnormal phenomena observed during the growth of silicon on a silver (Ag(111)) substrate through theoretical modeling and numerical simulations, and to verify the underlying physical mechanisms.

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