Abstract:Substrates with controlled surface morphologies are used to quantify the kinetics of surface mass transport during Stranski-Krastanov growth of epitaxial nanostructures. Morphologies are modified by laser texturing; tightly focused nanosecond laser pulses are used to produce micron-scale dimples on the surface of Si(001) substrates. The areal densities of three-dimensional Ge islands formed by chemical vapor deposition on these modified substrates is measured by atomic force microscopy for a wide range of Ge coverages (3-10 ML), temperatures (500<T<700 degreesC), and deposition rates (0.003<F<0.3 ML s(-1)). Island nucleation is enhanced at the vicinal surfaces surrounding the rim of the laser dimples, and, as a consequence, a denuded zone with a reduced island density surrounds each dimple. The width of the denuded zone can be as large as 50 times the island spacing and is created by extensive mass transport during the formation of the wetting layer. Mass transport is driven by chemical-potential gradients associated with the wetting-layer thickness, substrate vicinality, and the elastic relaxation of three-dimensional islands. We find excellent agreement between the data and a one-dimensional model calculation of diffusion and nucleation; the fit to the model gives a transport rate of Dn(0)approximate to1.5x10(5) s(-1) at 600 degreesC and an activation energy E-f+E(m)approximate to1.3 eV.

Influences of the Si(1 1 3) anisotropy on Ge nanowire formation and related island shape transition

Influences of the Si(1 1 3) anisotropy on Ge nanowire formation and related island shape transition

Influences of the Si(113) anisotropy on Ge nanowire formation and related island shape transition

Strain Evolution In Coherent Ge/Si Islands

X-ray Study of Strain and Composition of Si∕Ge0.85Si0.15(111) Islands Grown in Volmer-Weber Mode

Identification of Shape Transitions in Coherent Ge/Si Islands Using Transmission Electron Microscopy

Evolution of Coherent Islands During Strained-Layer Volmer-Weber Growth of Si on Ge(111)

Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition During Growth of Ge on Si(001)

Study of Si and Ge growth on Si(100) surface

Effect of Growth Rate on the Spatial Distributions of Dome-Shaped Ge Islands on Si(001)

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion

Anisotropic Strain Relaxation Of Ge Nanowires On Si(113) Studied By Medium-Energy Ion Scattering

Strains in Si Substrate Induced by Formation of Ge Islands

Surface Mass Transport and Island Nucleation During Growth of Ge on Laser Textured Si(001)

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Influence of Si Concentration on the Evolution of Shape and Size of Self-Assembled Ge Islands

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Control of Ge island coalescence for the formation of nanowires on silicon.