Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Initial stage of the 2D-3D transition of a strained SiGe layer on a pit-patterned Si(001) template

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation

Study of Si and Ge growth on Si(100) surface

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction

Formation of extended thermal etch pits on annealed Ge wafers

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate

Strains in Si Substrate Induced by Formation of Ge Islands

Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates

Influences of the Si(1 1 3) anisotropy on Ge nanowire formation and related island shape transition

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes