Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
Fei Gao,Jian-Huan Wang,Hannes Watzinger,Hao Hu,Marko J. Rančić,Jie-Yin Zhang,Ting Wang,Yuan Yao,Gui-Lei Wang,Josip Kukučka,Lada Vukušić,Christoph Kloeffel,Daniel Loss,Feng Liu,Georgios Katsaros,Jian-Jun Zhang
DOI: https://doi.org/10.48550/arXiv.2001.11305
2020-01-30
Mesoscale and Nanoscale Physics
Abstract:Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.