Abstract:The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

Composition of nanometer-scaled self-assembled SiGe islands

Investigation of Composition in Nano-Scaled Self-Assembled Sige Islands

Influence of Si Concentration on the Evolution of Shape and Size of Self-Assembled Ge Islands

Self-Assembled Sige Islands with Uniform Shape and Size by Controlling Si Concentration in Islands

Effect of Si Content in Sige Islands on the Critical Size for Shape Evolution

Composition and Its Impact on Shape Evolution in Dislocated Ge(Si)/Si Islands

Atomic Composition Profile Change of SiGe Islands During Si Capping

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Shape Change of Sige Islands with Initial Si Capping

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Study of Si and Ge growth on Si(100) surface

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Influences of the Si(1 1 3) anisotropy on Ge nanowire formation and related island shape transition

Universality in Shape Evolution of Si$_{1-x}$Ge$_{x}$ Structures on High Index Silicon Surfaces

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

The growth and investigation of SiGe films on buried Ge islands

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Influences of the Si(113) anisotropy on Ge nanowire formation and related island shape transition