Abstract:Conductive atomic force microscopy (C-AFM) has been employed to investigate the distribution of the lateral composition in Ge quantum dots (QDs) grown by molecular beam epitaxy on p-type Si(001) substrate. Since the different conductivity of the components (Ge and Si) in the Ge QDs results in different current signals, it is then possible to obtain the information of composition distribution from the current images. We have investigated two types of samples grown at 550°C and 640°C, respectively, and found that the conductance distribution of these two types of QDs were significantly different. This difference can be attributed to the different degrees of Si alloying into the Ge QDs at different growth temperatures. Our results demonstrate that the dome-shaped QDs grown at the higher temperature are Si–Ge alloys with Si composition >35% at most part of the QD, while the QDs with the same shape grown at the lower temperature show high Ge distribution (>65%) in the whole dot, which are supported by the selective etching experiments.

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Mechanism for Coarsening of P-mediated Ge Quantum Dots During In-Situ Annealing

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Thermal Diffusion Effect of Self-Assembled Ge Quantum Dots Probed by Fluorescence X-ray Absorption Fine Structure

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Annealing Effects on the Microstructure of Sputtered Gold Layers on Oxidized Silicon Investigated by Scanning Electron Microscopy and Scanning Probe Microscopy

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)