Abstract:We report on a simple and intuitionistic experimental method to quantitatively measure surface diffusion lengths of Ge adatoms on Si(001) substrates and its activation energy Ea, which is achieved by growing Ge quantum dots (QDs) on top surfaces of Si pillars with different radii and taking an advantage of preferential nucleation and growth of Ge QDs at the top surface edge of the pillars. Diffusion length of Ge adatom can directly be measured and determined by the radius of the pillar below which no QDs will nucleate and grow at the central region of the top surface of the Si pillar. With a growth rate v fixed at 0.1 Å/s, by changing the growth temperature, the diffusion lengths at different temperatures would be obtained. Arrhenius plot of diffusion length as a function of growth temperature gives the value of Ea of 1.37 eV. Likewise, with a growth rate v fixed at 0.05 Å/s, the Ea value is obtained to be 1.38 eV. Two Ea values agree well with each other, implying that the method is reliable and self-consistent. Moreover, for a fixed growth temperature, the surface diffusion lengths are found to be directly proportional to 1 / ν . It also agrees well with the theoretical prediction, further demonstrating the reliability of the method.

Thermal Diffusion Effect of Self-Assembled Ge Quantum Dots Probed by Fluorescence X-ray Absorption Fine Structure

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Interface Interdiffusion Intensified by Formation of Quantum Dots

Optical properties of Ge/Si quantum dot superlattices

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Investigation on Ge Surface Diffusion Via Growing Ge Quantum Dots on Top of Si Pillars

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Short-Range Order Structures of Self-Assembled Ge Quantum Dots Probed by Multiple-Scattering Extended X-Ray Absorption Fine Structure

Mechanism for Coarsening of P-mediated Ge Quantum Dots During In-Situ Annealing

Photoluminescence of Ge quantum dots buried in silicon

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Phosphorus-mediated growth of Ge quantum dots on Si(001)

X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices

Effects Of Interdiffusion On The Band Alignment Of Gesi Dots

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy