Abstract:X-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. The lattice parameters parallel and perpendicular to the surface are determined from the grazing angle and ordinary x-ray diffraction spectra. A 1.2% lattice constant expansion parallel to the interface and a 3.1% lattice expansion along the growth direction, as compared with the Si lattice, are found within the Ge dots. Based on the Poisson equation and the Vegard law, the Ge dot should be a partially strain relaxed SiGe alloy with the Ge content of 55%. The composition change in Ge dots is suggested to be caused by the atomic intermixing during the islanding growth. In the small grazing angle x-ray diffraction spectrum, a peak located at the higher angle side of Si(220) is observed. The origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain is induced by the formation of Ge dots and leads to a -0.8% lattice constant change parallel to the interface. (C) 2000 American Institute of Physics. [S0003-6951(00)04123-1].

Effects Of Interdiffusion On The Band Alignment Of Gesi Dots

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Thermal Diffusion Effect of Self-Assembled Ge Quantum Dots Probed by Fluorescence X-ray Absorption Fine Structure

Optical properties of Ge/Si quantum dot superlattices

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

X-Ray Diffraction Analysis on Gallium-Indium Interdiffusion in Quantum Dot Superlattices

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

Interface Interdiffusion Intensified by Formation of Quantum Dots

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Widely Tunable Intersubband Energy Spacing of Self-Assembled Inas/Gaas Quantum Dots Due to Interface Intermixing

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer