Abstract:The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\perp = (-0.8 \pm 0.1_\mathrm{stat})\,\mathrm{meV}$. We find that the experimentally determined coupling constants of the Ising model can be reconciled with those of the more complex lattice Hamiltonian from DFT when the critical behavior is of primary interest. The anisotropy of the interactions derived from the experimental data via the 2D Ising model is best matched by DFT calculations using the PBEsol functional. The trends in the calculated anisotropy are consistent with the surface stress anisotropy predicted by the DFT functionals, pointing towards the role of surface stress reduction as a driving force for establishing the $c(4 {\times} 2)$-reconstructed ground state.

Universality in Shape Evolution of Si$_{1-x}$Ge$_{x}$ Structures on High Index Silicon Surfaces

Influence of Si Concentration on the Evolution of Shape and Size of Self-Assembled Ge Islands

Study of Si and Ge growth on Si(100) surface

Effect of Si Content in Sige Islands on the Critical Size for Shape Evolution

Composition of nanometer-scaled self-assembled SiGe islands

Investigation of Composition in Nano-Scaled Self-Assembled Sige Islands

Monte Carlo Modeling of Ge Surface Segreation in Si1-xGex Thin Films

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Self-Assembled Sige Islands with Uniform Shape and Size by Controlling Si Concentration in Islands

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Composition and Its Impact on Shape Evolution in Dislocated Ge(Si)/Si Islands

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Cluster-size distribution of SiGe alloys grown by MBE

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Critical Layer Thickness in Stranski-Krastanow Growth of Ge on Si(001)

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Structure analysis of SiCGe films grown on SiC

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class

Island Nucleation in Silicon on Si(111) Growth under Chemical Vapor Deposition