Abstract:The formation of NiSi1−xGex on Si1−xGex(111) substrates with x=0, 0.05, and 0.20 at an annealing temperature of 500°C has been studied by x-ray diffraction, transmission electron microscopy, and pole-figure measurements. NiSi formed preferentially oriented on Si, with (100), (001), and (102) parallel to Si(111) and NiSi[010]‖Si⟨211⟩. In NiSi0.95Ge0.05, (001) and (102) maintained their preferential orientations, whereas NiSi0.95Ge0.05(100) was rotated by 30°, so that NiSi0.95Ge0.05[010]‖Si0.95Ge0.05⟨011⟩. An epitaxial alignment in the form of a double axiotaxy, with NiSi0.95Ge0.05(2±11) as well as (20−2)‖Si0.95Ge0.05{220}, simultaneously with NiSi0.95Ge0.05(0±13) as well as (020)‖Si0.95Ge0.05{022}, caused NiSi0.95Ge0.05(100) to tilt over the range of 0°–7.5°. The Ge addition also enhanced the preferentially oriented structure by reinforcing NiSi0.95Ge0.05(123)‖Si0.95Ge0.05(111) through the axiotaxial alignments, NiSi0.95Ge0.05(211) and (−112)‖Si0.95Ge0.05{220}. Observed was also the presence of NiSi0.95Ge0.05(011)‖Si0.95Ge0.05(111), with NiSi0.95Ge0.05[100]‖Si0.95Ge0.05⟨011⟩. In the case of NiSi0.80Ge0.20, the preferential orientations were sharply reduced in favor of NiSi0.80Ge0.20(100)‖Si0.80Ge0.20(111), with NiSi0.80Ge0.20[010]‖Si0.80Ge0.20⟨011⟩ and the 30° rotation thus preserved. The observed Ge influence is shown to be consistent with a model suggested earlier for Si1−xGex(001) substrates, which is based on the nonexistence of Ni(Si1−xGex)2 for all except the smallest values of x. High-resolution transmission electron microscopy was used to show that the surface steps typical of molecular-beam-deposited epitaxial Si1−xGex substrate films do not influence the growth of the NiSi1−xGex.

Cluster-size distribution of SiGe alloys grown by MBE

Size Distribution of Clusters and Nucleation Preference of Trimers During SiC (0001) Surface Epitaxial Growth under Low Coverage

Study of Si and Ge growth on Si(100) surface

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Structural study of crystalline and amorphous phases of Si0.65Ge0.35B (x = 0, 0.01, 0.05, 0.10) alloy prepared by long-time mechanical alloying

Universality in Shape Evolution of Si$_{1-x}$Ge$_{x}$ Structures on High Index Silicon Surfaces

Simulation study on Si and Ge film growth by cluster deposition

Effect of Si Content in Sige Islands on the Critical Size for Shape Evolution

Geometries, Stabilities, and Growth Patterns of the Bimetal Mo-2-Doped Si-N (N=9-16) Clusters: A Density Functional Investigation

Lattice constants and optical response of pseudomorph Si-rich SiGe:B

Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate

Metal-doped Germanium Clusters MGens at the Sizes of N=12 and 10: Divergence of Growth Patterns from the MSin Clusters

Influence of Germanium on the Formation of NiSi1−xGex on (111)-Oriented Si1−xGex

Island-growth of SiCGe films on SiC

Structure analysis of SiCGe films grown on SiC

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Morphological Instability of NiSi1−uGeu on Single-Crystal and Polycrystalline Si1−xGex

Phase stability of monolayer Si1- xGex alloys with a Dirac cone

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Dielectric Behavior and Prolate Growth Patterns of Silicon Clusters Si N with N = 12–30 by Cryogenic Electric Beam Deflection

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure