Abstract:Si 1-x Ge x alloy nanocrystals (NCs) are a class of benign semiconductors that show size and composition-tunable energy gaps and promising optical properties because of the lattice disorder. The random distribution of elements within the alloys can lead to efficient light-matter interactions, making them attractive for Si-compatible optoelectronic devices, transistors, charge storage, and memory applications. However, the fabrication of discrete, quantum-confined alloys has proven a challenging task. Herein, we report solid-state co-disproportionation of a hydrogen silsesquioxane (HSQ)/GeI 2 composite precursor to produce homogeneous Si 1-x Ge x NCs with control over diameter (5.9 ± 0.7 – 7.8 ± 1.1 nm) and composition (x = 0 – 14.4%) with strong size confinement effects and visible to near IR absorption and emission properties. As-synthesized alloys show an expanded diamond cubic Si structure, a systematic red-shift of Si-Si Raman peak, and emergence of Si-Ge/Ge-Ge peaks with increasing Ge, consistent with the admixture of isovalent elements. Surface analysis of alloys reveals Si 0 /Ge 0 core and Si n+ /Ge n+ surface species and efficient surface functionalization with alkyl ligands via thermal hydrosilylation and/or hydrogermylation. Alloy NCs exhibit absorption onsets (2.26 – 1.92 eV), indirect (1.53 – 1.80 eV) and direct (2.88 – 2.47 eV) energy gaps, and photoluminescence (PL) maxima (1.40 – 1.27 eV) that can be tuned by manipulating the diameter and/or composition. The experimental PL energies are consistent with those predicted by density functional theory (DFT) suggesting that the PL originates from NC core electronic transitions. The facile low-temperature solid-state synthesis and control over physical properties realized in this study will allow discrete Si 1-x Ge x NCs to emerge as low to nontoxic, earth-abundant, and Si-compatible nanostructures for a broad range of electronic and photonic technologies.

Phase stability of monolayer Si1- xGex alloys with a Dirac cone

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Chemo-mechanics in alloy phase stability

Chemomechanics in alloy phase stability

Phase stability and the interface structure of a nanoscale Si crystallite in Al-based alloys

Thermal Transport In Molecular Beam Epitaxy Grown Si1-Xgex Alloy Films With A Full Spectrum Of Composition (X=0-1)

The Metastable Phase Transition of the Alloy (gaas)1−xsi2x and Its Electronic Properties

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Solid-State Synthesis of Si1-xGex Nanoalloys with Composition-Tunable Energy Gaps and Visible to Near Infrared Optical Properties

Electronic Origin of the Phase Transition in Ternary Alloy Mo(Si1−x,Alx)2

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Layered Growth Model and Epitaxial Growth Structures for Sicaln Alloys

Effcet of Annealing on Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum Chemical Vapor Deposition

Group 14 semiconductor alloys in the P41212 phase: A comprehensive study

Two-Dimensional III-Nitride Alloys: Electronic and Chemical Properties of Monolayer Ga(1-x)AlxN

Investigation on crystal structure, electrical and magnetic properties of CeAl(Si1-xGex)

Confinement of Si-like LO phonons: Effects of Si1-xGex alloyed layers

Experimental and First principle calculation of Co_xNi_{(1-x)}Si solid solution structural stability

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Comparative study on stability and electronic properties of two-dimensional AlxGa1−xN/GaN heterostructure with variable Al contents

Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides