Abstract:Due to the extensive application of Al-Si alloys in the automotive and aerospace industries as structural components, an understanding of their microstructural formation, such as dendrite and（Al+Si） eutectic, is of great importance to control the desirable microstructure, so as to modify the performance of castings. Since previous major themes of microstructural simulation are dendrite and regular eutectic growth, few efforts have been paid to simulate the irregular eutectic growth. Therefore, a multiphase cellular automaton（CA） model is developed and applied to simulate the time-dependent Al-Si irregular eutectic growth. Prior to model establishment, related experiments were carried out to investigate the influence of cooling rate and Sr modification on the growth of eutectic Si. This CA model incorporates several aspects, including growth algorithms and nucleation criterion, to achieve the competitive and cooperative growth mechanism for nonfaceted-faceted Al-Si irregular eutectic. The growth kinetics considers thermal undercooling, constitutional undercooling, and curvature undercooling, as well as the anisotropic characteristic of eutectic Si growth. The capturing rule takes into account the effects of modification on the silicon growth behaviors.The simulated results indicate that for unmodified alloy, the higher eutectic undercooling results in the higher eutectic growth velocity, and a more refined eutectic microstructure as well as narrower eutectic lamellar spacing. For modified alloy, the eutectic silicon tends to be obvious fibrous morphology and the morphology of eutectic Si is determined by both chemical modifier and cooling rate. The predicted microstructure of Al-7Si alloy under different solidification conditions shows that this proposed model can successfully reproduce both dendrite and eutectic microstructures.

Layered Growth Model and Epitaxial Growth Structures for Sicaln Alloys

Layered Growth Modelling of Epitaxial Growth Processes for SiC Polytypes

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on Sic (0001) Substrates

Chemical Structures Of Algan/Aln/Si (111) By Mocvd Using Aes And Xps

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Phase-Field Model of Silicon Carbide Growth During Isothermal Condition

First-principles Calculations of the Stability and Local Structure of -Sialon Ceramics on the Line Si3N4–½Ca3N2:3AlN

Structural Evolution, Mechanical Properties, and Electronic Structure of Al–Mg–Si Compounds from First Principles

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Modeling of Aluminum-Silicon Irregular Eutectic Growth by Cellular Automaton Model

Surface morphology study and electrical properties of Si1 - xCx on Si grown by low pressure chemical vapor deposition

Design and Growth of P-Type AlGaN Graded Composition Superlattice

Phase stability of monolayer Si1- xGex alloys with a Dirac cone

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Crack-free Sc$_{x}$Al$_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

Microstructures of Algan/Aln/Si (111) Grown by Metalorganic Chemical Vapor Deposition

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

The Growth Model and Experimental Validation of Size-Controlled Nanocrystalline Silicon

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition