Abstract:The alloy AlxGa1−xN was grown by metal-organic chemical vapor deposition (MOCVD) using a high-temperature AlN interlayer on a thick GaN template. The Al composition (x) of the AlxGa1−xN was varied in the range 0.13⩽x⩽0.8. The in-situ reflectance spectra indicate that the growth process of AlGaN alloys is dominated by trimethylgallium (TMGa) molar flux when the molar flux of trimethylaluminium (TMAl) is kept constant. The Al compositions and growth rates of AlGaN alloys were determined by Rutherford backscattering, which indicates that the incorporation efficiency of TMAl is improved remarkably by decreasing the TMGa molar flux. The crystalline quality of these AlGaN alloys is evaluated by measuring the symmetric (002) and asymmetric (102) ω-scan X-ray diffraction peak widths. The best crystalline quality, among these AlxGa1−xN alloys, is for an Al composition of x=0.54 where the full-width at half-maximums of the AlGaN (002) and (102) diffraction peaks are 265 and 797arcsec, respectively. This conclusion is consistent with the surface morphology of the AlGaN alloys probed by atomic force microscopy. Room temperature cathodoluminescence spectra show pronounced near band edge emission from these AlGaN alloys. The optical band gaps (Eg) are found to deviate from linear interpolation between EgGaN and EgAlN with a bowing parameter b=0.89.

Chemical Structures Of Algan/Aln/Si (111) By Mocvd Using Aes And Xps

Microstructures of Algan/Aln/Si (111) Grown by Metalorganic Chemical Vapor Deposition

Interfacial Properties of AlN/Si (111) Grown by Metal-Organic Chemical Vapour Deposition

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

The Structure And Electronic Properties Of Aln/Srtio3 (111) Interfaces

Structural Study Of Chemical Vapor Deposition Of Si On Gan

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Characterization for Microstructure of GaN on Si Substrates

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Layered Growth Model and Epitaxial Growth Structures for Sicaln Alloys