Abstract:The question of stability against diffusional mixing at the prototypical LaAlO3/SrTiO3(001) interface is explored using a multi-faceted experimental and theoretical approach. We combine analytical methods with a range of sensitivities to elemental concentrations and spatial separations to investigate interfaces grown using on-axis pulsed laser deposition. We also employ computational modeling based on the density function theory as well as classical force fields to explore the energetic stability of a wide variety of intermixed atomic configurations relative to the idealized, atomically abrupt model. Statistical analysis of the calculated energies for the various configurations is used to elucidate the relative thermodynamic stability of intermixed and abrupt configurations. We find that on both experimental and theoretical fronts, the tendency toward intermixing is very strong. We have also measured and calculated key electronic properties such as potential energy gradients and valence band discontinuity at the interface. We find no measurable electric field in either the LaAlO3 or SrTiO3, and that the valence band offset is near zero, partitioning the band discontinuity almost entirely to the conduction band edge. Significantly, we find it is not possible to account for these electronic properties theoretically without including extensive intermixing in our physical model of the interface. The atomic configurations which give the greatest electrostatic stability are those that eliminate the interface dipole by intermixing, calling into question the conventional explanation for conductivity at this interface—electronic reconstruction. Rather, evidence is presented for La indiffusion and doping of the SrTiO3 below the interface as being the cause of the observed conductivity.

The Structure And Electronic Properties Of Aln/Srtio3 (111) Interfaces

The structure and electronic properties of AlN/SrTiO3 (1 1 1) interfaces

Structural and Electronic Properties of the Adsorption of Oxygen on AlN (101̅0) and (112̅0) Surfaces: A First-Principles Study

Nucleation Interface of Al?Sb Alloys on Single Crystal Al2O3 Substrate

Atomic Structure of the Interface Between Srtio3 Thin Films and Si(001) Substrates

Chemical Structures Of Algan/Aln/Si (111) By Mocvd Using Aes And Xps

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Interfacial Properties of AlN/Si (111) Grown by Metal-Organic Chemical Vapour Deposition

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Atomic-scale Structure and Electronic Property of the LaAlO3/TiO2 Interface

Microstructures of Algan/Aln/Si (111) Grown by Metalorganic Chemical Vapor Deposition

Interface properties of nonpolar LiAlO2/SrTiO3 heterostructures

Stable Structure and Effects of the Substrate Ti Pre-Treatment on the Epitaxial Growth of SrTiO 3 on GaAs

Interfacial and Microstructural Properties of Srtio3 Thin Films Grown on Si(001) Substrates

In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Atomic-scale Measurement of Structure and Chemistry of a Single-Unit-cell Layer of LaAlO3 Embedded in SrTiO3.

Ab initio supported study on the selective adsorption-induced microstructural difference of (Ti,Al)N/TiN and (Ti,Al)N/ZrN multilayers

Ti-adsorption Induced Strain Release in Promoting Α-Al Nucleation at TiB2 - Al Interfaces

Formation of a Conducting LaAlO$_3$ / SrTiO$_3$ Interface Studied by Low Energy Electron Reflection During Growth