Abstract:Nowadays, the application of multicomponent coatings with multiphase nanocrystalline structure is the most promising direction in the search for wear-resistant protective coatings with a full set of necessary operational properties. Nanocrystalline multicomponent coatings based on the Ti-Al-Ta-Si-N system have a high hardness combined with thermal stability and oxidation resistance. Silicon atoms are weakly soluble in the TiN, Ti1−xAlxN, and TaN crystalline phases of the Ti-Al-Ta-Si-N system and interact preferentially with N atoms, forming the amorphous Si3N4 phase. In this context, it is important to first study the peculiarities of the interaction of Si atoms with the simplest structural units of the Ti-Al-Ta-Si-N system, such as TiN, AlN, and TaN compounds with the NaCl structure. This work is devoted to the study of the interaction of a Si atom with the (001) surface of AlN, TiN, and TaN compounds with the NaCl structure using ab initio calculations. This provides information for a deep understanding of the initial stages of the formation of different crystallites of the considered composite. It was established that the adsorption of silicon on the (001) surface of AlN, TiN, and TaN significantly increases the relaxation of the surface layers and leads to an increase in the corrugation observed on the clean surfaces. The largest corrugation is observed on the surface of the TaN compound. The most energetically favorable adsorption positions of Si atoms were found to be the position of Si above the N atom on the TiN and TaN surfaces and the quadruple coordinated position on the AlN surface. The valence electron density distribution and the crystal orbital Hamiltonian population were studied to identify the type of Si atom bonding with the (001) surface of AlN, TiN, and TaN compounds. It was found that silicon forms predominantly covalent bonds with the nearest metal and nitrogen atoms, except for the quadruple coordinated position on the surface of TiN and TaN, where there is a high degree of ionic bonding of silicon with surface atoms.

The structure and electronic properties of AlN/SrTiO3 (1 1 1) interfaces

The Structure And Electronic Properties Of Aln/Srtio3 (111) Interfaces

Ti-adsorption Induced Strain Release in Promoting Α-Al Nucleation at TiB2 - Al Interfaces

Interfacial Properties of AlN/Si (111) Grown by Metal-Organic Chemical Vapour Deposition

Ti-adsorption induced strain release in promoting α-Al nucleation at TiB 2 - Al interfaces

Ab initio supported study on the selective adsorption-induced microstructural difference of (Ti,Al)N/TiN and (Ti,Al)N/ZrN multilayers

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

First-principles calculations to investigate the interfacial energy and electronic properties of Mg/AlN interface

Observation on the Interface of Α-Al2o3/cr2o3: Prepared by Oxidation of Al45Cr7

Atomic-scale Structure and Electronic Property of the LaAlO3/TiO2 Interface

Chemical Structures Of Algan/Aln/Si (111) By Mocvd Using Aes And Xps

Electronic structures and properties of TiAl/Ti2AlNb heterogeneous interfaces: A comprehensive first-principles study

Understanding the surface adsorption and oxidation of cubic Cr0.5Al0.5N by first-principles calculations

First-Principles Investigation on the Adsorption and Diffusion of Oxygen at the B2(110)–O(001) Interface in Ti2AlNb Alloys

Microstructures of Algan/Aln/Si (111) Grown by Metalorganic Chemical Vapor Deposition

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

An ab initio molecular dynamics study on Ti2AlN(0001) surfaces

Stable Structure and Effects of the Substrate Ti Pre-Treatment on the Epitaxial Growth of SrTiO 3 on GaAs

Interaction of Si Atom with the (001) Surface of TiN, AlN and TaN Compounds

Interface properties of nonpolar LiAlO2/SrTiO3 heterostructures

First-principles study of the Ti(0001)/TiAl 3 (110) interfacial properties