Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Room-temperature Photoluminescence of Doped 4H-Sic Film Grown on AlN/Si(100)

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Temperature-dependent Photoluminescence Spectra of GaN Epitaxial Layer Grown on Si (111) Substrate

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

Cathodoluminescence Study of 3C-Sic Epilayers Grown on 4H-Sic Substrates

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Photoluminescence Properties of A-Sic : H Films Grown by Plasma Enhanced Chemical Vapor Deposition from Sih4+C2h2 Gas Mixtures

Study on the Structural and Optic-Electronical Properties of 4h Polytype-Sic Films

Facile Thermal Explosion Synthesis and Optical Properties of Al-doped Flatted 3C-Sic Microcrystals with 4H-Sic Quantum Interlayers

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Defects in epitaxial 4H-SiC revealed by exciton recombination

XRD and SIMS analysis of single crystal SiC films grown on sapphire

Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System