Abstract:Carbon-based novel low-dimensional XC/YC (with X, Y ≡ Si, Ge, and Sn) heterostructures have recently gained considerable scientific and technological interest in the design of electronic devices for energy transport use in extreme environments. Despite many efforts made to understand the structural, electronic, and vibrational properties of XC and XxY1−xC alloys, no measurements exist for identifying the phonon characteristics of superlattices (SLs) by employing either an infrared and/or Raman scattering spectroscopy. In this work, we report the results of a systematic study to investigate the lattice dynamics of the ideal / as well as graded SLs by meticulously including the interfacial layer thickness (≡1–3 monolayers). While the folded acoustic phonons (FAPs) are calculated using a Rytov model, the confined optical modes (COMs) and FAPs are described by adopting a modified linear-chain model. Although the simulations of low-energy dispersions for the FAPs indicated no significant changes by increasing , the results revealed, however, considerable "downward" shifts of high frequency COMs and "upward" shifts for the low energy optical modes. In the framework of a bond polarizability model, the calculated results of Raman scattering spectra for graded SLs are presented as a function of Special attention is paid to those modes in the middle of the frequency region, which offer strong contributions for enhancing the Raman intensity profiles. These simulated changes are linked to the localization of atomic displacements constrained either by the XC/YC or YC/XC unabrupt interfaces. We strongly feel that this study will encourage spectroscopists to perform Raman scattering measurements to check our theoretical conjectures.

Confinement of Si-like LO phonons: Effects of Si1-xGex alloyed layers

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

Vibrational properties of Si/Ge superlattices

Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Effect of layer thickness variation on light scattering by acoustic phonons in SiGe/Si superlattices

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Structural stability of SiGe/Si strained-layer superlattices

Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices

Phonon-Spectra Of Strained Si And Ge

Lattice Dynamics of Si/Ge (001) Superlattices

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

Electronic states and phonon properties of Ge x Si 1−x nanostructures

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Influence of GeSi Interfacial Layer on Ge–Ge Optical Phonon Mode in SiO2 Films Embedded with Ge Nanocrystals

Enhanced Quantum-Confined Pockels Effect Insigesuperlattices

Effect of electron-phonon interaction on lattice thermal conductivity of SiGe alloys

Phase stability of monolayer Si1- xGex alloys with a Dirac cone

Raman Scattering Intensities of Folded Longitudinal Acoustic Phonons in Ge X Si 1- X / Si Superlattices