Abstract:Strained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1-xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Lattice-Dynamics Of Strained Si/Ge Superlattices

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

GEOMETRICAL CONFIGURATIONS OF (si)n/(ge)n SUPERLATTICES

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Calculation Of Critical Layer Thickness Considering Thermal Strain In Si1-Xgex/Si Strained-Layer Heterostructures

Structural stability of SiGe/Si strained-layer superlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Study of strain distribution in GeSi/Si strained heterostructure

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE

Matrix description of dynamical HOLZ diffraction tested on the strained layer superlattice Si/GeSi

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems