Abstract:We have revisited the critical thickness for plastic relaxation hc of SiGe on Si(001). To that end, we have started from prime 200-mm Si(001) wafers and grown (at 20 Torr with SiH2Cl2 and GeH4) various thickness and Ge content SiGe layers in an Epi Centura reduced-pressure–chemical-vapor-deposition chamber. Growth temperature was reduced from 700 °C to 550 °C, as the Ge content increased from 12% to 52%, to minimize surface roughening. X-ray diffraction (XRD) was performed on all samples to determine hc for the various Ge contents probed. Fully strained layers were characterized by: (i) peaks at a constant incidence angle that became narrower and more intense as the thickness increased, and (ii) the presence of numerous thickness fringes on each side of the layers’ peaks. Meanwhile, broader, less intense peaks (without thickness fringes) closer to the Si substrate peak were associated with plastically relaxed SiGe layers. Plastic strain relaxation was more gradual and less complete in higher Ge content layers grown at lower temperatures. We then performed haze and atomic force microscopy (AFM) measurements to have wafer and local scale quantifications of the surface roughening, which occurs when exceeding hc. For 12%, 22%, and 32% Ge, the haze and the surface roughness drastically increased for thicknesses greater than hc. For 42% Ge, the haze and the surface roughness were low for layers that had barely begun to relax, and became much larger for layers that were more plastically relaxed. Finally, for 52% Ge, there was a continuous but less pronounced increase of the haze and surface roughness when getting close to or exceeding hc. The critical thickness for plastic relaxation inferred from XRD was, for Ge content 22% and above, approximately two times higher than predicted by the People and Bean theory [Appl. Phys. Lett. 49, 229 (1986)]. However, some of the thickest SiGe 32%–52%, layers, considered fully strained in XRD, were observed by AFM to have a few “plow” lines, which are the surface signatures of misfit dislocations.

Calculation Of Critical Layer Thickness Considering Thermal Strain In Si1-Xgex/Si Strained-Layer Heterostructures

CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si 1- X Ge X /si STRAIN LAYER HETEROSTRUCTURES

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Calculation of the bandgap narrowing due to heavy doping in p-type strained Si1-xGex layers

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Lattice-Dynamics Of Strained Si/Ge Superlattices

Study of strain distribution in GeSi/Si strained heterostructure

The growth and quality evaluation of strained Si material with multilayer structure

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Investigation of Strain and Thin Film Relaxation in GexSi1−x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

Critical thickness for plastic relaxation of SiGe on Si(001) revisited

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*

Heteroepitaxial Growth of GexSi1-x Strained Layer on Si by RRH/VLP-CVD

Effect of the Thickness of the Strained Si on Hall Mobility

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing