Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Calculation of the bandgap narrowing due to heavy doping in p-type strained Si1-xGex layers

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

A Self-Consistent Numerical Approach for Characterizing the Band Structures and Gain Spectrum of Tensile-Strained and N(+)-Doped Ge/GeSi Quantum Wells

Calculation Of Critical Layer Thickness Considering Thermal Strain In Si1-Xgex/Si Strained-Layer Heterostructures

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Models of Material Parameters for Strained Si/sub 1-X/ge/sub X/ Layers and Study of Hot-Carrier Transport and High Frequency Performance of Si/SiGe HBT

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

On the Impact of Heavy Doping on Grown-In Defects in Czochralski-Grown Silicon

Strain and Electrical Characterization of Boron-Doped Sigec Layers Grown by Chemical Vapor Deposition

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si 1- X Ge X /si STRAIN LAYER HETEROSTRUCTURES

Valence band structure calculations of strained Ge$_{1-x}$Sn$_x$ quantum well pFETs

Integration of Highly Strained Sige in Source and Drain with Hk and Mg for 22 Nm Bulk Pmos Transistors