Abstract:Computational study of atomically thin monolayer MoS2/WSe2 heterojunction with focus on carrier dynamics and thermal transport is performed by using finite-difference method to solve carrier transport equations and heat conduction equation. Carrier transport in the horizontal direction is in the micrometer scale, while in the vertical direction it is on the subnanometer scale. Carrier transport is modeled as diffusive transport in the horizontal direction with tunneling-assisted carrier recombination between two monolayers in the vertical direction as in the previous study. Band profile, quasi-Fermi level splitting, carrier distribution, and heat generation are investigated in detail. The heterojunction with high-doping concentration has larger current compared to that with low-doping concentration. Heat generation has two components which are due to the Joule heating and inelastic carrier recombination, respectively. The former is provided by the applied voltage, while the latter is from surrounding environment which acts as thermal reservoir. Since the heterojunction works very differently from the conventional p-n diode, it is compared to typical field-effect transistors due to similar device structures. The heat generation of the heterojunction is eight orders lower than that of typical nanoscale field-effect transistors because of its low-current density. Temperature increase in the heterojunction is also several orders of magnitude lower compared to typical nanoscale field-effect transistors.

Models of Material Parameters for Strained Si/sub 1-X/ge/sub X/ Layers and Study of Hot-Carrier Transport and High Frequency Performance of Si/SiGe HBT

Si/SiGe Heterostructure Parameters for Device Simulations

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Development on Si/SiGe heterojunction bipolar transistors

The Influence of Strained SiGe Thin Layer and Correlative Structure Parameters on Sub-Threshold Characteristics of SiGe PMOSFETs

A Base Transport Model for Ultra-Thin-base SiGe HBT

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

A Self-Consistent Numerical Approach for Characterizing the Band Structures and Gain Spectrum of Tensile-Strained and N(+)-Doped Ge/GeSi Quantum Wells

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Energy Transport Model of Scaling SiGe HBT

On the Intrinsic Spacer Layer in Si/SiGe Heterojunction Bipolar Transistor Grown by Ultra High Vacuum Chemical Vapor Deposition

Analytical Threshold Voltage Models for Strained Si/Strained Si<sub>1-x</sub>Ge<sub>x</sub>/Relaxd Si<sub>1-y</sub>Ge<sub>y</sub> PMOSFET

Simulation of band-to-band tunneling in Si/Ge and Si/Si 1-xGex heterojunctions by using Monte Carlo method

Calculation of the bandgap narrowing due to heavy doping in p-type strained Si1-xGex layers

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Development of SiGe/Si Film Heterojunction Bipolar Transistors

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor

Two-Dimensional Analytical Model of Hetero Strained Ge/Strained Si TFET

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices