Abstract:The performance of strained silicon as the channel material for transistors has plateaued. Motivated by increasing charge-carrier mobility within the device channel to improve transistor performance, germanium (Ge) is considered as an attractive option as a silicon replacement due to its highest p-type mobility in all of the known semiconductor materials and being compatible with today's conventional CMOS manufacturing process. However, the intrinsically high carrier mobility of Ge becomes significantly degraded because Ge's native oxide is unstable and readily decomposes into several GexOy suboxides with a high density of dangling bonds at the surface. In addition, these interface trap states will also degrade the off-state leakage current and subthreshold turn-off of a Ge-based device, significantly affecting its stability. Furthermore, obtaining low-resistance Ohmic contacts to n-type Ge is another key challenge in developing Ge CMOS. To solve these challenges, extensive efforts have been made about the incorporation of new materials, such as Al2O3, SiN3, TiO2, ZnO, Ge3N4, MgO, HfO2, SrTiO3, and Y2O3, into Ge transistors. Controlling the diffusion of foreign atoms into Ge is therefore a critical issue in developing Ge transistors regarding that foreign impurities may be detrimental to devices. In this work, we study the diffusion properties of all common elements in Ge by performing the first-principle calculations with a nudged elastic band method. We find some large atoms, such as Cu, Au, Pd, etc., have a very small diffusion barrier. We reveal the underlying mechanism in a combination of local distortion induced by size effect and bonding effect that controls the diffusion behaviors of different atoms in Ge. This comprehensive study and relatively in-depth understanding of diffusion in Ge provides us with a practical guide for utilizing it more efficiently in semiconductor devices.

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Si- and Ge-Based Electronic Devices

Interdiffusion in Group IV Semiconductor Material Systems: Applications, Research Methods and Discoveries

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Monte Carlo Modeling of Ge Surface Segreation in Si1-xGex Thin Films

New Materials for Post-Si Computing: Ge and GeSn Devices

RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

Modeling of Ge surface segregation in vapor-phase deposited Si1−xGex thin films

Epitaxy and characterization of undoped Si/SiGe heterojunctions

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Atomic mechanisms of fast diffusion of large atoms in Germanium

Si/SiGe Heterostructure Parameters for Device Simulations

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Modeling Uphill Diffusion of Mg Implants in Gaas Using Suprem-Iv

Design, fabrication and operation of sub-65nm straeved-si/si 1-xGEx mosfets

Effect of SiGe-Composite Placement on Quantum Effects of a Nanowire FET Using NEGF

Models of Material Parameters for Strained Si/sub 1-X/ge/sub X/ Layers and Study of Hot-Carrier Transport and High Frequency Performance of Si/SiGe HBT

Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes