Abstract:Silicon-based semiconductor quantum dot quantum computing coding with spin is compatible with traditional microelectronic processes, easy to expand, and can be isotope purified to improve the decoherence time, so it has attracted much attention. There are fewer reports on the work related to undoped Si/SiGe heterostructures grown by molecular beam epitaxy compared with chemical vapor deposition. An undoped Si/SiGe heterostructure has been grown by molecular beam epitaxy. The scanning transmission electron microscopy and energy-dispersive spectroscopy mapping results show an atomic-scale interface with a characteristic length of 0.53 nm. The surface root-mean-square roughness measured by atomic force microscope is 0.44 nm. The X-ray diffraction data show that the Si quantum well is fully strained and the in-plane strain is 1.03%. In addition, the performance of the two-dimensional electron gas was evaluated by low-temperature Hall measurements, which were conducted in the Hall-bar shaped field-effect transistor. It shows a peak mobility of 20.21×10 4 cm 2 ·V -1 ·s -1 when the carrier density is about 6.265×1011 cm-2 at 250 mK. The percolation density is 1.465×10 11 cm -2 . The effective mass of the two-dimensional electron gas is approximately 0.19 m 0 . The power exponential relationship (1.026) between carrier density and mobility at different gate voltages, along with the Dingle ratio (7-12) of the two-dimensional electron gas, indicates that the electrons are scattered by background impurities and semiconductor/oxide interfaces charges. The atomically sharp interface of Si/SiGe heterostructures created by molecular beam epitaxy is beneficial for researching the valley physics properties in silicon. The structural and transport characterizations in this paper lay the foundation for the optimization of Si-based semiconductor quantum dot quantum computing materials.

Si/SiGe Heterostructure Parameters for Device Simulations

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Simulation of band-to-band tunneling in Si/Ge and Si/Si 1-xGex heterojunctions by using Monte Carlo method

Study of carrier transport through GexSi1−x/Si heterojunctions by using 2D Monte Carlo simulation method

Study of strain distribution in GeSi/Si strained heterostructure

A Self-Consistent Numerical Approach for Characterizing the Band Structures and Gain Spectrum of Tensile-Strained and N(+)-Doped Ge/GeSi Quantum Wells

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Mechanical and Lattice Thermal Properties of Si-Ge Lateral Heterostructures

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Molecular Beam Epitaxy of High Mobility Silicon, Silicon Germanium and Germanium Quantum Well Heterostructures

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Epitaxy and characterization of undoped Si/SiGe heterojunctions

Simulation of Carrier Transport in Heterostructures Using the 2d Self-Consistent Full-Band Ensemble Monte Carlo Method

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Effect of SiGe-Composite Placement on Quantum Effects of a Nanowire FET Using NEGF