Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

Two-Dimensional Analytical Model of Hetero Strained Ge/Strained Si TFET

A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Si-based hetero-material-gate tunnel field effect transistor: Analytical model and simulation

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

A Tunneling Field Effect Transistor Model Combining Interband Tunneling with Channel Transport

Tunneling FETs on SOI: Suppression of Ambipolar Leakage, Low-Frequency Noise Behavior, and Modeling

Performance Characterization and Analytical Modelling of Electrostatic Doped Heterostructure Nanotube Tunnel Field Effect Transistor

A Compact Model for Double-Gate Heterojunction Tunnel Fets

Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor

An Empirical Model for Static I–V Characteristics of Double Gate Tunneling Field Effect Transistor

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Analytical Current Model of Tunneling Field-Effect Transistor Considering the Impacts of Both Gate and Drain Voltages on Tunneling.

All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality