Abstract:High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base-collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y- and Z-parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base-collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the SiGe HBT small-signal model parameters by taking numerically simulated Y- and Z-parameters as nominal “measurement data" with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, the extraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base-collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S-parameters as a function of frequency.

Numerical Simulation and Analysis of SiGe HBT's Characteristic Parameters

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Numerical Simulation of SiGe HBT Irradiated by 1mev Neutron Beam

Low-Frequency Noise Characteristics of Si/SiGe HBT's

High-Frequency Noise Characteristics of Si/SiGe HBT's

Development on Si/SiGe heterojunction bipolar transistors

Influence of Heterojunction Position on SiGe HBTs with Graded BC Junctions

Numerical Simulation of Bias Effect on Dose Rate Effect of SiGe Heterojunction Bipolar Transistor

2D Simulation of a SiGe HBT Based on Energy Balance Model

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

Energy Transport Model of Scaling SiGe HBT

Development of SiGe/Si Film Heterojunction Bipolar Transistors

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

Study on the Characteristics of the SiGe NPN HBT with Novel Structure

DC-AC Models and Verification of High-Frequency HBT

Small-signal Model Parameter Extraction for Microwave SiGe HBTs Based on Y- and Z-parameter Characterization

A Base-Emitter Self-Aligned Multi-Finger Si1-Xgex/Si Power Heterojunction Bipolar Transistor

Models of Material Parameters for Strained Si/sub 1-X/ge/sub X/ Layers and Study of Hot-Carrier Transport and High Frequency Performance of Si/SiGe HBT

Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements

Simulation and Analysis of Inverse-Mode Operation of Single Event Transient Mechanisms on NPN-SiGe HBT