Abstract:This paper presents an overview of the physics, modeling, and circuit implications of RF broad-band noise, low-frequency noise, and oscillator phase noise in SiGe heterojunction bipolar transistor (HBT) RF technology. The ability to simultaneously achieve high cutoff frequency (f/sub T/), low base resistance (r/sub b/), and high current gain (/spl beta/) using Si processing underlies the low levels of low-frequency 1/f noise, RF noise, and phase noise of SiGe HBTs. We first examine the RF noise sources in SiGe HBTs and the RF noise parameters as a function of SiGe profile design, transistor biasing, sizing, and operating frequency, and then show a low-noise amplifier design example to bridge the gap between device and circuit level understandings. We then examine the low-frequency noise in SiGe HBTs and develop a methodology to determine the highest tolerable low-frequency 1/f noise for a given RF application. The upconversion of 1/f noise, base resistance thermal noise, and shot noises to phase noise is examined using circuit simulations, which show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1/f corner frequency measured under dc biasing. The implications of SiGe profile design, transistor sizing, biasing, and technology scaling are examined for all three types of noises.

High-Frequency Noise Characteristics of Si/SiGe HBT's

Low-Frequency Noise Characteristics of Si/SiGe HBT's

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Improvement of high frequency noise of SiGe HBT

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Effects of Layout Size on High-Frequency Noise Characteristics of Si/SiGe HBT's

Impact of Geometrical Scaling on High-Frequency Noise in SiGe HBTs

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Numerical Simulation and Analysis of SiGe HBT's Characteristic Parameters

Transistor noise in SiGe HBT RF technology

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

Study on the Characteristics of the SiGe NPN HBT with Novel Structure

Development on Si/SiGe heterojunction bipolar transistors

Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Research for SiGe HBT

Avalanche effects on current & voltage characteristics in SiGe HBT

DC-AC Models and Verification of High-Frequency HBT

Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure

Influence of Heterojunction Position on SiGe HBTs with Graded BC Junctions