Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Development on Si/SiGe heterojunction bipolar transistors

Study on the Characteristics of the SiGe NPN HBT with Novel Structure

Power characteristics of SiGe heterojunction bipolar transistor at 900 MHz

A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS

900 Mhz 7.4 Wsige Heterojunction Bipolar Transistor

Development of SiGe/Si Film Heterojunction Bipolar Transistors

Research for SiGe HBT

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition

SiGe HBT Device in Mixed Dry Wet Etching

Study of the SiGe HBT Based on the Self-Alignment and Air-Bridge

UHV/CVD i-Si epitaxy and ion implantation doping for sub-micrometer N -Collector of SiGeHBT

Improvement of high frequency noise of SiGe HBT

Comparison Between Mbe-Based Sige/Si Hbt And Si-Based Bipolar Transistor Technologies

High-Frequency Noise Characteristics of Si/SiGe HBT's

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Si- and Ge-Based Electronic Devices

A Novel Double-poly Self-aligned High-voltage Power SiGe HBT