Study on the Characteristics of the SiGe NPN HBT with Novel Structure

Donghua LIU,Wenting DUAN,Jing SHI,Jun HU,Fan CHEN,Jingfeng HUANG,Wensheng QIAN,Sheng'an XIAO,Dongyuan ZHU
DOI: https://doi.org/10.3969/j.issn.1000-3819.2013.01.007
2013-01-01
Abstract:The paper studies the characteristics of a SiGe NPN HBT with novel structure. Through analyzing the effect of width and length of emitter window, the device performance has been optimized by adjusting device structure and manufacturing process. Three devices with different working voltage and operation speed have achieved comparable industry performance and implemented successfully in optical communication and RF PA products.
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