Abstract:This paper presents an overview of the physics, modeling, and circuit implications of RF broad-band noise, low-frequency noise, and oscillator phase noise in SiGe heterojunction bipolar transistor (HBT) RF technology. The ability to simultaneously achieve high cutoff frequency (f/sub T/), low base resistance (r/sub b/), and high current gain (/spl beta/) using Si processing underlies the low levels of low-frequency 1/f noise, RF noise, and phase noise of SiGe HBTs. We first examine the RF noise sources in SiGe HBTs and the RF noise parameters as a function of SiGe profile design, transistor biasing, sizing, and operating frequency, and then show a low-noise amplifier design example to bridge the gap between device and circuit level understandings. We then examine the low-frequency noise in SiGe HBTs and develop a methodology to determine the highest tolerable low-frequency 1/f noise for a given RF application. The upconversion of 1/f noise, base resistance thermal noise, and shot noises to phase noise is examined using circuit simulations, which show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1/f corner frequency measured under dc biasing. The implications of SiGe profile design, transistor sizing, biasing, and technology scaling are examined for all three types of noises.

Low-Frequency Noise Characteristics of Si/SiGe HBT's

High-Frequency Noise Characteristics of Si/SiGe HBT's

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Numerical Simulation and Analysis of SiGe HBT's Characteristic Parameters

Impact of Geometrical Scaling on High-Frequency Noise in SiGe HBTs

Effects of Layout Size on High-Frequency Noise Characteristics of Si/SiGe HBT's

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Transistor noise in SiGe HBT RF technology

Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

Improvement of high frequency noise of SiGe HBT

The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

Development on Si/SiGe heterojunction bipolar transistors

Influence of Heterojunction Position on SiGe HBTs with Graded BC Junctions

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

Study on the Characteristics of the SiGe NPN HBT with Novel Structure

Effects of Electron Temperature Distribution on Base Transit Time of SiGe HBT

Influence of collector region design on SiGe power HBT linearity characteristics

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation