Abstract:Silicon technologies for HF applications have been proven for more than two decades, and technologies have greatly evolved. Whether CMOS or BiCMOS technologies, the unique combination of radio frequency, baseband, and digital functions allow a very high level of integration. While it is possible to achieve fully integrated transceivers, the major advantages of these silicon technologies lie mainly in their unparalleled performance in the field of frequency synthesis and frequency conversion. We propose in this paper a review of the major results obtained on these RF components since the beginning of the 2000s, also considering the impact of the technology node. The back-end of line (BEOL) process on which depends the quality of microwave monolithic integrated circuits (MMICs) is briefly presented in the introductory part. If circuit performances are tightly bound to the active devices (i.e., the heterojunction bipolar transistor SiGe HBT or CMOS transistor), passive elements (i.e., quality factor of inductors and varactors, losses of transmission, or interconnection lines) as well as the definition of the substrate also play a major role. The core of the article is oriented toward the noise of synthesized signals and frequency conversion. Frequency synthesis is presented through the analog design of a voltage-controlled oscillator (VCO) or through the direct digital frequency synthesis (DDFS), for which respective figures of merit are presented and discussed in a second section. The spectral purity of the oscillators being decisive in the definition of the throughput of a link is approached through the comparison of different figures of merit (FoM) for a set of circuits achievements over the selected period. If the realization of free oscillators is closely bound to the phase-locked loop (PLL)-type control loop for VCOs, the DDFS solution provides more direct and more flexible alternative at first sight. Therefore, these two solutions are analyzed collectively. Finally, the oscillator integrated in the transmitter or receiver supplies the needed LO (local oscillator) power to the frequency mixer in the frequency conversion module: henceforth, the third part of this study focuses on high-frequency mixer realizations. We thus consider this LO power in some advanced figure of merit mentioned in the second section. The design trade-off of the mixer is presented in an approach combining LO (conversion gain, channel isolation, and phase noise) and RF (HF noise figure and channel isolation) constraints. The final section provides a summary of the results and trends mentioned in the paper.

Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

Transistor noise in SiGe HBT RF technology

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

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High-Frequency Noise Characteristics of Si/SiGe HBT's

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1/F Noise in GaN/AlGaN HEMTs

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

Research for SiGe HBT

Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier

1/F Noise in Si and Si/sub 0.7/ge/sub 0.3/ Pmosfets

Noise modeling for RF CMOS circuit simulation

The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

Numerical simulation of single-particle transients in low-noise amplifiers based on Silicon-Germanium heterojunction transistors and inverse-mode structures

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

Low-Frequency Noise of Nc-Si:H/C-Si Heterojunction Diodes