Abstract:This paper discusses the effects of several geometric parameters in DC and RF performances of AlGaN/GaN high electron mobility transistors (HEMTs) grown on high-resistivity silicon substrates. Those parameters include the dependency of gate length (L-g), gate cap length (L-cap) and gate-to-source distance (L-gs). It is shown that decreasing L-g and L-gs can both improve maximum drain current and transconductance behaviors. The fabricated 50 mu m wide GaN-HEMT exhibits the maximum drain current of 1 A mm(-1) at V-g = 2 V and maximum extrinsic transconductance G(mmax) of 240 mS mm(-1). Besides, decreasing L-g and L-cap also provides the improvement on current gain frequency (f(T)) and maximum oscillation cut off frequency (f(MAX)). The f(T) of 40 GHz and f(MAX) of 55 GHz at V-ds = 5 V are demonstrated by GaN-HEMT device featuring L-g of 200 nm, L-cap of 300 nm and L-gs of 1.2 mu m, which can realize the compact solid-state power amplifier used in S and C band. However, gate-to-source distance has little effect on RF performance of AlGaN/GaN HEMTs. Those results compared in our study are not only very essential for accurate GaN-based HEMT device modeling and fabrication, but are also vital to better understanding of their device physics.

Effects of Layout Size on High-Frequency Noise Characteristics of Si/SiGe HBT's

Impact of Geometrical Scaling on High-Frequency Noise in SiGe HBTs

Impact of Ge Profile on Main Electrical Characteristics of SiGe

High-Frequency Noise Characteristics of Si/SiGe HBT's

Low-Frequency Noise Characteristics of Si/SiGe HBT's

Hierarchical layout design of power SiGe HBTs

Improvement of high frequency noise of SiGe HBT

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Effects of Electron Temperature Distribution on Base Transit Time of SiGe HBT

Development on Si/SiGe heterojunction bipolar transistors

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Effects of doping and Ge fraction grading in the base on the base transit time and Early voltage of Si/SiGe HBTs

Avalanche effects on current & voltage characteristics in SiGe HBT

Transistor noise in SiGe HBT RF technology

Impact of Metal System on Self-Heating Effect of SiGe HBT's

Impact of Layout and Profile Optimization for Inverse-Mode SiGe HBT on SET and TID Responses

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Emitter-base short issue study and improvement in a low cost and high performance 0.18um SiGe BiCMOS process

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

The Effect Of The Gate-Drain Distance On High Frequency And Noise Performance For Algan/Gan Hemt

The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's