Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Comparison Between Mbe-Based Sige/Si Hbt And Si-Based Bipolar Transistor Technologies

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Development of SiGe/Si Film Heterojunction Bipolar Transistors

Growth and Quality Control of Mbe Sige-Hbt Structures for Analog Ic Applications

Mbe-Based Sige/Si Heterojunction Multilayer Structures

Development on Si/SiGe heterojunction bipolar transistors

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

Research for SiGe HBT

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

900 Mhz 7.4 Wsige Heterojunction Bipolar Transistor

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Electron Irradiation Effects on Dc Electrical Performances of Sige Hbt in A Comparison with Sibjt

Growth and quality control of MBE-based SiGe-HBT for amplifier applications

Influence of Heterojunction Position on SiGe HBTs with Graded BC Junctions

Si- and Ge-Based Electronic Devices

Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition

SiGe HBT Device in Mixed Dry Wet Etching

Electrical Performance Analysis of Electron Irradiated SiGe HBT and Si BJT