Abstract:The single-event transient response of a high-voltage complementary SiGe-on-silicon-on-insulator technology is investigated along with its temperature dependence using a pulse laser. The p-n-p silicon-germanium heterojunction bipolar transistor (SiGe HBT) shows a larger transient peak amplitude compared to the n-p-n SiGe HBT, which is largely related to the differences in total device volume and peak germanium content between the p-n-p and n-p-n devices. The effects of temperature on the transient response are also investigated using heaters and sensors mounted directly on the device-under-test package. The collector transient peak amplitude shows a negative temperature coefficient for a <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> of 0-V condition, for both the n-p-n and p-n-p devices. However, the temperature dependence of the transient peak amplitude becomes significantly weaker at <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}>0$ </tex-math></inline-formula> V. Calibrated TCAD simulations were performed to better understand the temperature dependence, and the simulations indicated that the electric field and mobility at higher <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> have a reduced temperature dependence than at a <inline-formula> <tex-math notation="LaTeX">$V {_{\text {CB}}}$ </tex-math></inline-formula> of 0 V. The effects of self-heating are also explored using TCAD simulations and show that even under aggressive self-heating conditions, there is only less than 10% reduction in transient peak amplitude with the self-heating models turned on. The results shown suggest that this particular SiGe technology can be used for environments where highly energetic particles and high temperatures are encountered simultaneously.

Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Room temperature continuous wave operation of a heterojunction bipolar transistor laser

Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Dc characteristics of proton radiated SiGe power HBTs at cryogenic temperature

Investigation of cryogenic current–voltage anomalies in SiGe HBTs: Role of base–emitter junction inhomogeneities

Investigation of Cryogenic Current-Voltage Anomalies in SiGe HBTs: Role of Base-Emitter Junction Inhomogeneities

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Development of SiGe/Si Film Heterojunction Bipolar Transistors

Development on Si/SiGe heterojunction bipolar transistors

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

Experimental Characterization of Proton Radiated SiGe Power HBTs at Extreme Temperatures.

Theoretical prediction of the performance of Si and SiC bipolar transistors operating at high temperatures

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

UHV/CVD n--type silicon epitaxy used for SiGe HBT device

Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures