Abstract:The demand for accurate temperature sensing in extreme temperatures is increasing. Traditional silicon-based integrated temperature sensors usually cannot survive above 200 °C. Many researchers have started to focus on semiconductors with a large bandgap. Among them, silicon carbide (SiC) is the most promising one. Nevertheless, most reported SiC sensors are in the form of discrete components and are not compatible with integrated electronics. In this work, we demonstrate an open 4H-SiC CMOS technology, and the fabrication steps are detailed. The temperature sensing elements in this technology, including resistors based on different implanted layers and MOSFETs, are characterized up to 600 °C. At room temperature, the resistive-based elements demonstrate large negative temperature coefficients of resistance (TCRs). With increasing temperature, the TCR starts to decrease and even becomes positive. The TCR change is due to the interplay between increasing dopant ionization rate and decreasing mobility as a function of temperature. The resistance change with temperature fits well into the Steinhart-Hart model and second-order polynomial equation. The p-type diode-connected MOSFET has a sensitivity of 4.35 mV/°C with a good linearity. The nMOS-based sensor has a maximum sensitivity of −9.24 mV/°C but a compromised linearity. The characterization of these sensing elements provides important results for potential users who will work on SiC integrated temperature sensing with this technology.

Theoretical prediction of the performance of Si and SiC bipolar transistors operating at high temperatures

Simulated Performance of SiC Based OP-AMP at High Temperature

Electrothermal Model of SiC Power BJT

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

Static and dynamic characterization of silicon carbide bipolar junction transistor

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Fulfilling the Promise of High-Temperature Operation with Silicon Carbide Devices: Eliminating bulky thermal-management systems with SJTs

Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

A 200℃ Silicon Carbide MOSFET Gate Driving Circuit Based on Bipolar Junction Transistor

Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules

A detailed simulation study of the performance of -silicon carbide MOSFETs and a comparison with their silicon counterparts

High-temperature Electrical Characteristics of JBS-integrated 4H-Sic MOSFETs

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

4H-Sic BJT Characterization at High Current High Voltage

Junction temperature dynamics of power MOSFET and SiC diode

Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

Modeling of SiC MOSFET with temperature dependent parameters and its applications